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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1796-1799 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The method of electron paramagnetic resonance (EPR) has been used to study the n-type semiconducting Ru(S1−xSex)2 single crystals grown by the method of chemical vapor transport. A chalcogen point defect model is established to account for the S=1/2 paramagnetic species detected by EPR. This model assumes that an X2−(X=S or Se)-X vacancy pair behaves like an electron donor. The g-factor anisotropy is dependent upon the degree of chalcogen deficiency which is interpreted as due to the formation of a narrow band by the magnetic electrons of the chalcogen defect below the bottom of the conduction band.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 370-375 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An electron-paramagnetic-resonance study of the iron pyrite crystals grown by the method of chemical-vapor transport is reported. Cr3+ and Ni2+ ions were detected as substitutional impurities. An effective spin S =1/2 defect species that exhibits hyperfine couplings to the two natural isotopes of chlorine was detected in sulfur-deficient FeS2 grown by using ICl3 as a transport agent. This species can be identified as the defect species (SCl)2−. The similarity and differences exhibited by this defect species in the sulfur-deficient Fe pyrite and the chalcogen-deficient Ru pyrites are discussed.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1710-1714 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical-absorption study of synthetic pyrite FeS2 single crystals prepared by the chemical-vapor-transport method is reported over a temperature range from 4.2 to 300 K. At lower temperatures several features which occur below the absorption edge are superposed on the absorption curve. The origin of the sharpest peak is identified as the transition between the top of valence band and Cr3+ trapping center through comparison of the results with that of the low-temperature photoconductivity and the photoelectron paramagnetic resonance measurements. The nature of other weaker features is discussed. The existence of these features prevents the determination of the band gap of FeS2 by fitting the optical-absorption data to the form of (αhν)∝(hν−E0)n. Therefore, the energy gap of FeS2 at low temperatures is estimated by adding the thermal ionization energy of the shallow acceptor states to the photoionization energy between the (SCl)2− states and the bottom of the conduction band. The band gap of various temperatures is determined and its temperature dependence is analyzed by an empirical expression proposed by O'Donnell and Chen [Appl. Phys. Lett. 58, 2924 (1991)]. The parameters that describe the temperature dependence of Eg of the material are evaluated and discussed. © 1995 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5282-5285 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The method of photo-electron paramagnetic resonance has been used to investigate the photosensitivities of the Cr3+, Ni2+, and (SCl)2− impurities and defects detected by electron paramagnetic resonance (EPR) in synthetic FeS2 crystals grown by the method of chemical vapor transport by using ICl3 as the transport agent. Cr3+ and (SCl)2− are photosensitive, but Ni2+ is not, to IR illumination with photon energy less than the band-gap energy. A decrease (photoquenching) in the EPR signal of Cr3+ and an increase (photoinduction) in the EPR signal of (SCl)2− were detected at low temperatures. At T(approximately-equal-to)110 K, the spectral response of the photoquenching of Cr3+ is the largest near λ=1425 nm−1 (0.87 eV), which can be correlated with the 0.90 eV photoconductivity peak and the 0.87 eV IR absorption peak observed at low temperatures in the same batches of crystals. After several cycles of on–off IR illumination, the equilibrium population of Cr3+ is less than that of the virgin state, indicating the presence of hole traps. The transient and equilibrium behaviors of the (SCl)2− defects are just the opposite, which indicates that a S2− defect behaves as a hole trap. A band model has been established to explain the observed photoquenching of Cr3+, the photoconductivity peak, and the IR absorption peak.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4230-4233 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A paramagnetic species of spin 1/2, with the four 〈111〉 axes of the cubic lattice as the symmetry axes, has been observed by electron paramagnetic resonance in undoped, as-grown RuS2 single crystals. The g values at 10.8 K are g(parallel) =2.022±0.001 and g⊥ =2.088±0.001. The most probable origin of this paramagnetic species is an S− ion adjacent to an S vacancy.
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 96 (1992), S. 5746-5748 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 4460-4463 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A digital nuclear magnetic resonance (NMR) spectrometer based on a PC is described. The instrument works in a digital manner not only in rf frequency synthesis but also in receiver detection and filtering. A control program and a data processing procedure are developed using the Delphi 5 for Windows '95/'98 operating system. Compared with a traditional spectrometer, the present design is rather simple in its hardware parts. As a consequence, building a NMR spectrometer using the proposed design is simple and low cost. © 2001 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 88 (1988), S. 2862-2863 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A CrO3−4 center with the z2 ground state is detected by ESR in Na2SO4 crystals grown at 80 °C, doped with CrO2−4, and gamma irradiated. A CrO3−4 center with the x2−y2 ground state, interacting with two chemically equivalent but magnetically distinguishable protons, is detected in crystals grown at 40 °C.
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Computing 38 (1987), S. 75-87 
    ISSN: 1436-5057
    Keywords: 65H05 ; Complex polynomial ; zeros ; parallel Halley iteration method ; convergence order
    Source: Springer Online Journal Archives 1860-2000
    Topics: Computer Science
    Description / Table of Contents: Zusammenfassung In dieser Arbeit leiten wir fünf Varianten eines Algorithmus zur parallelen Bestimmung der Nullstellen eines komplexen Polynoms her. Ihre Konvergenz und deren Rate höherer Ordung werden bestimmt. Die Algorithmen werden an einem Beispiel vom Grad 10 numerisch illustriert, die Ergebnisse sind zufriedenstellend.
    Notes: Abstract In this paper we derive five kinds of algorithms for simultaneously finding the zeros of a complex polynomial. The convergence and the convergence rate with higher order are obtained. The algorithms are numerically illustrated by an example of degree 10, and the numerical results are satisfactory.
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  • 10
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 373-374 (Mar. 2008), p. 273-276 
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The electrodeposition of aluminum on 316L stainless steel from a molten salts based onchloride has been studied. The surface morphology of the aluminum layer has been examined throughscanning electron microscope (SEM) and the structure of the aluminum layer has been analyzed byX-ray diffraction (XRD). The thickness of the deposited aluminum layer has been measured by themethod of cross-section scan. It has been suggested that a white, smooth, non-porous and a high purityaluminum layer can be obtained on 316L stainless steel from the ternary chloride molten salts (AlCl3– NaCl - KCl). And the structure of the aluminum layer was single-phase
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