Electronic Resource
s.l. ; Stafa-Zurich, Switzerland
Solid state phenomena
Vol. 124-126 (June 2007), p. 463-466
ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
About 2[removed info]-thick, amorphous SiON thin films were deposited by the PECVD method, andheated up to 1000oC in air to study the post-annealing effect on the composition and structure of theSiON film. SiON had a strong SiO2 binding energy with a weak N-binding, so that air-annealingresulted in nitrogen escape from the film. The inwardly transported oxygen from the atmospherewas simply supersaturated inside the annealed, amorphous SiON thin film
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.124-126.463.pdf
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