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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 95 (1991), S. 8428-8430 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 9089-9095 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The relative yield of photoinduced desorption from NO-exposed Si(111)7×7 has been measured as a function of photon power, wavelength, polarization, incident angle, and coverage of coadsorbed potassium. The results are analyzed in terms of two possible mechanisms: direct photoelectronic excitation of the NO-surface complex and interaction of hot carriers photogenerated in the substrate with the NO-surface complex. The substrate-mediated mechanism is found to be principally responsible for the photoreactions.
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 2689-2705 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The adsorption of NO on Si(111)7×7 at 90 K and the subsequent reactions induced by thermal heating and photon irradiation have been investigated in detail, using high-resolution electron energy loss spectroscopy and mass spectrometry. It is found that, in addition to molecular and dissociative adsorption of NO, N2O is produced from NO on Si(111)7×7 at 90 K. The product N2O physisorbs on the surface and, at 110 K, partially desorbs and partially dissociates into N2 and O. Molecular adsorption of NO exists in two independent, presumable bridge and atop configurations. There is no observable conversion between the two forms of molecularly adsorbed NO. At 147 K, the bridge NO is thermally activated, which leads to simultaneous NO desorption and, to a much larger extent, N2O synthesis. Dissociation of bridge NO also occurs at about 147 K, at least at low NO exposures. The atop NO is not involved in the thermal reactions at 147 K, but dissociates between 200 and 300 K. Photon irradiation in the UV, visible, and IR induces desorption and dissociation of NO on Si(111)7×7 at 90 K via nonthermal mechanisms. Furthermore, evidence for photosynthesis of N2O on the surface is observed. It is suggested that the N2O synthesis during thermal heating and photon irradiation proceeds via reaction between an adsorbed NO molecule and a hot N atom produced from NO dissociation.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 5701-5714 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Photodissociation of Mo(CO)6 adsorbed on potassium-free and potassium-preadsorbed Cu(111) and Si(111)7×7 at 85 K has been studied under ultrahigh vacuum conditions. The photodissociation yield has been measured as a function of photon power (0.5–30 mW/cm2 ), wavelength (250–800 nm), polarization (s and p), and incident angle (20°–70°). Two surface photoreaction mechanisms are considered: (i) direct electronic excitation of the adsorbate and (ii) attachment of photogenerated hot carriers to the adsorbate. The photodissociation spectra obtained on K-free Cu(111) and Si(111)7×7 exhibit the same resonant structure as the absorption spectrum of Mo(CO)6. Photodissociation of Mo(CO)6 on K-free surfaces is thus determined to be dominated by direct electronic excitation of the adsorbate, which proceeds via a single-photon process. A new photodissociation channel is opened on K-preadsorbed surfaces. The photoyield increases substantially in the UV and extends to the visible and near IR. By studying the wavelength and polarization dependences of the photoyield, it is firmly established that the new photodissociation channel is due to interaction of photogenerated hot carriers with the adsorbate. The photogenerated hot electrons tunnel through the potential barrier between the adsorbed Mo(CO)6 and substrate and attach to the Mo(CO)6 molecules. This mechanism is energetically possible in the presence of K due to a substantial up-shift in the Fermi level associated with the decrease in the work function. The negative ions formed by electron attachment are unstable and undergo dissociation.
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 9077-9088 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The adsorption and photodissociation of Mo(CO)6 on potassium-free and potassium-preadsorbed Cu(111) and Si(111)7×7 have been studied under ultrahigh vacuum conditions using vibrational spectroscopy and mass spectrometry. It has been observed that Mo(CO)6 adsorbs molecularly on potassium-free Cu(111) and Si(111)7×7 at 85 K and, upon heating, desorbs at 200 K. In the case of Cu(111), heating also leads to thermal dissociation of a fraction of Mo(CO)6 at ∼150 K. The dissociation channel competes favorably with the molecular desorption channel at low Mo(CO)6 exposures. On potassium-preadsorbed Cu(111) and Si(111)7×7 at 85 K, Mo(CO)6 adsorbs in part molecularly and in part dissociatively. The extent of dissociation depends on the K coverage; a high K coverage results in large degree of dissociation. The thermal desorption temperature for the molecularly adsorbed Mo(CO)6 increases to 210 K on the potassium-preadsorbed surfaces. Adsorbed Mo(CO)6 molecules photodissociate nonthermally into CO and carbonyl fragments. The product CO desorbs under irradiation. Photodissociation occurs on the K-free surfaces only under ultraviolet (UV) irradiation. With coadsorbed potassium, however, the photoyield increases substantially in the UV and extends to the visible and infrared (IR) regions. The carbonyl fragments which are present on the K-preadsorbed surfaces before irradiation are found to have a negligible contribution to the CO desorption signal. The photoactive species is identified to be the molecularly adsorbed Mo(CO)6 .
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 5050-5058 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The adsorption, thermoreactions, and photoreactions of NO coadsorbed with potassium on Si(111)7×7 at 90 K have been investigated using work-function measurements, high-resolution electron energy loss spectroscopy, and mass spectrometry. A minimum in the work function of Si(111)7×7 at 90 K vs the potassium exposure is observed and it is suggested that higher K exposures passed the work-function minimum result in the formation of K multilayers, which upon thermal heating desorb at 315 K. Submonolayers of potassium introduce a new adsorption configuration of NO on Si(111)7×7 at 90 K. This new NO species exhibits a weak intramolecular bonding and competes with NO adsorbed in other configurations. During thermal heating, this NO species gradually dissociates, thus contributing to N2 recombinative desorption, and at relatively high K coverages leads to desorption of N2 and N2O at 555 K via N2O synthesis from NO. The surface after thermal heating to 〉555 K is depleted of molecular species and covered with atomic N and O. Preferential surface oxidation occurs in the presence of potassium. Under photon irradiation (300–900 nm), desorption of N2, NO, and N2O is observed. The photodesorption intensities decrease monotonically as the K coverage increases. The experiments provide further evidence that the dominant contribution to the three photodesorbed species comes from molecularly adsorbed NO and that N2O is synthesized under photon irradiation.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3501-3503 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photocarrier diffusion within several hundred angstroms of a Si(111) surface was studied by the transient grating technique in the reflection geometry with independently tunable pump and probe picosecond laser pulses. A monotonous decay of the diffraction signal on 10−10 s scale immediately following the carrier excitation pulse was observed and attributed to band edge carrier diffusion. The ambipolar diffusivity at photocarrier density of 2×1019 cm−3 is determined to be 4.7 cm2/s. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 7058-7063 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A strong oscillation pattern was observed in optical second-harmonic generation (SHG) at a Ag(111) surface under pyridine adlayers with variable thickness. This oscillation appears only when s-, but not p-, polarized fundamental light is used. This effect is attributed to the modulation of the radiation efficiency of the fundamental light penetrating into the Ag bulk and of the second-harmonic light radiating out to the vacuum by pyridine overlayers through optical interference. A standard optical interference model has been developed to quantitatively analyze the oscillation patterns and determine the adlayer thickness. It was found that at 90 K the pyridine overlayer growth rate is 1.4 A(ring) per Langmuir exposure.
    Type of Medium: Electronic Resource
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  • 9
    Publication Date: 2005-06-08
    Print ISSN: 0031-9007
    Electronic ISSN: 1079-7114
    Topics: Physics
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  • 10
    Publication Date: 2006-11-17
    Print ISSN: 0031-9007
    Electronic ISSN: 1079-7114
    Topics: Physics
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