ISSN:
1662-8985
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Of all the processing stages for wafers, interior temperature distribution in thermaltreatment furnaces has a great influence on wafer properties. Therefore, internal temperaturedistribution is a key factor for operating a furnace. However, it is practically impossible to directlymeasure temperatures within the furnace, and consequently the need for a reliable numerical model toanalyze temperature distribution is becoming increasingly urgent. Exact modeling of the processingis very difficult because the structure of the furnace used for thermal treatment is very complex, withlarge numbers of Si wafers stacked within. Therefore, simplified modeling is necessary. Themodeling strategy of the present study is to reduce the radiation calculation domain and simplify themodel by replacing the wafer stack region with a single block. It is necessary to determine the verticaland horizontal effective thermal conductivities of the block to reflect radiation heat transfer betweenwafers. In this study, calculations were performed through numerical experimentation, using r k asthe heat transfer coefficient in the direction of the radius, and v k for the vertical direction. Usingthese calculated property values, the temperature distribution within a 300mm thermal treatmentfurnace can be obtained
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/39/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.15-17.537.pdf
Permalink