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  • 1
    Electronic Resource
    Electronic Resource
    Effects of lattice distortion on the physical properties and surface morphology of magnetoresistive perovskite epitaxial films : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 5499-5501 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of lattice distortion on the physical properties of La0.7Ca0.3MnO3 epitaxial films are investigated. Our results suggest that larger substrate-induced lattice distortion gives rise to larger zero-field resistivity and larger negative magnetoresistance. Similar effects are also observed in samples of different thicknesses and on the same substrate material, with larger resistivity and magnetoresistance associated with thinner samples. In addition to x-ray diffraction spectroscopy, the degrees of lattice distortion in different samples are further verified by the surface topography taken with a low-temperature scanning tunneling microscope. Quantitative analyses of the transport properties suggest that the high-temperature (T→TC) colossal magnetoresistance (CMR) in the manganites is consistent with the conduction of lattice polarons induced by the Jahn–Teller coupling, and that the low-temperature (T(very-much-less-than)TC) magnetoresistance may be attributed to the magnetic domain wall scattering. In contrast, the absence of the Jahn–Teller coupling and the large conductivity in La0.5Ca0.5CoO3 epitaxial films yield much smaller negative magnetoresistance, which may be attributed to disorder-spin scattering. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364580
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  • 2
    Electronic Resource
    Electronic Resource
    Tunneling spectroscopy study of spin-polarized quasiparticle injection effects in cuprate/manganite heterostructures (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5350-5352 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning tunneling spectroscopy was performed at 4.2 K on epitaxial thin-film heterostructures comprising YBa2Cu3O7−δ and La0.7Ca0.3MnO3, to study the microscopic effects of spin-polarized quasiparticle injection from the half-metallic ferromagnetic manganite on the high Tc cuprate superconductor. The quasiparticle tunneling characteristics observed were consistent with d-wave pairing symmetry, with a gap-maximum Δ0(approximate)22 meV, up to at least 35 mA (7×103 A/cm2) injection. Spectral smearing observed at higher injections could be fitted to elevated effective quasiparticle temperatures, even though negligible sample heating was detected by in situ thermometry. The overall spectral evolution with the injection current also appears to be nonthermal in character, showing a nonmonotonic change in both the zero-bias tunneling conductance and the area under the conductance spectrum. We discuss general implications of these results for the scenario of dynamic pair breaking by a nonequilibrium distribution of spin-polarized quasiparticles. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370249
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  • 3
    Electronic Resource
    Electronic Resource
    A negative transition width in perpendicular recording? (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 3940-3942 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In perpendicular recording, the measured density response curve corrected with gap, spacing, and thickness losses may show a positive slope. This corresponds to an unphysical negative transition width in an arctangent transition. Analysis has been done to understand this phenomenon. We found that for a perpendicular media with Hc much less than 4πMs, an isolated transition is partially demagnetized in the tail region and consists of more high frequency component than an arctangent transition. By linear superposition, the high frequency readback amplitude can be boosted by this enhanced high frequency spectrum in the isolated pulse. The readback resolution of a thick perpendicular media in fact is equivalent to an infinitesimally thin longitudinal media with extremely narrow transition width. However, the readback amplitude is higher due to the thicker magnetic layer. As to a perpendicular media with Hc greater than 4πMs, the so-called "negative transition width'' does not occur and the resolution of the readback signal becomes relatively poor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334869
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  • 4
    Electronic Resource
    Electronic Resource
    Giant spontaneous Hall effect and magnetoresistance in La1−xCaxCoO3 (0.1≤x≤0.5) : The 7th joint MMM-intermag conference on magnetism and magnetic materials (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 6998-7000 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results of resistivity and Hall effect measurements in La1−xCaxCoO3 (0.1≤x≤0.5) epitaxial films and ceramics are presented. The spontaneous Hall effect in La1−xCaxCoO3 (LCCO) is observed for ferromagnetic samples with x≥0.2. The Hall effect is largest near the magnetic percolation threshold x=0.2. For x=0.2, the low-field slope of the Hall resistivity, ρxy/(μ0H), attains a large value of 2×10−6 m3/C below the Curie temperature Tc, which may be applied to sensitive low-field detection. Except near the magnetic percolation threshold, the longitudinal resistivity of LCCO decreases with increasing field at all temperatures. Anomalous temperature-dependent magnetoresistance occurs in the sample with x=0.2, which may be associated with the spin-state transition in LCCO. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367623
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  • 5
    Electronic Resource
    Electronic Resource
    Tunneling evidence of half-metallicity in epitaxial films of ferromagnetic perovskite manganites and ferrimagnetic magnetite : The 7th joint MMM-intermag conference on magnetism and magnetic materials (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 7366-7368 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Direct evidence of half-metallic density of states is observed by scanning tunneling spectroscopy of ferromagnetic La0.7Ca0.3MnO3 and La1−xSrxMnO3 (x=0.3, 0.33) epitaxial films which exhibit colossal magnetoresistance (CMR). At 77 K, well below the Curie temperatures, the normalized tunneling conductance (dI/dV)/〈I/V〉 for all samples exhibits similar pronounced peak structures, consistent with the spin-split density of states spectra for the itinerant bands in the ferromagnetic state. The exchange energy splitting between the majority and minority spins, as well as an apparent energy gap near the Fermi level, show variations with the chemical composition and the temperature. For comparison, the tunneling spectrum of a half-metallic ferrimagnet Fe3O4 is also studied. The characteristic spin-split density of states spectrum is observed, and the similarities and differences of Fe3O4 compared with the perovskite manganites are discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367799
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  • 6
    Electronic Resource
    Electronic Resource
    Selective distribution of arsenic precipitates in low-temperature-grown III–V heterostructures (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 52-54 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated arsenic precipitation in arsenide heterostructures grown at low temperature by molecular beam epitaxy. In these heterostructures, both doping and bond strength are found to affect arsenic precipitation during thermal annealing. For GaAs/Al0.3Ga0.7As multiple quantum wells, where GaAs is Be doped and Al0.3Ga0.7As is Si doped, arsenic precipitates preferentially appear in the GaAs region after annealing. For In0.1Ga0.9As/GaAs/In0.1Al0.9As heterostructures, whether they are doped or not, arsenic precipitates always tend to condense in the In0.1Ga0.9As region, indicating that the bond strength effect dominates the process of arsenic precipitation over the doping effect. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124274
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  • 7
    Electronic Resource
    Electronic Resource
    Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1567-1569 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the matrix-dependent strain effect in self-assembled InAs quantum-dot heterostructures using photoluminescence measurements. A series of samples were prepared to examine the effect of quantum dot position with respect to the so-called strain-reducing layer (SRL). Since the SRL reduces the residual hydrostatic strain in the quantum dots, long emission wavelength of 1.34 μm is observed for the InAs quantum dots with an In0.16Ga0.84As SRL. The dependence of the emission wavelength on the thickness of the cap layer on SRL also indicates the importance of the role of matrix in the strain relaxation process of the dots. Using In0.16Al0.84As instead of In0.16Ga0.84As as the SRL, a blueshift in wavelength is observed because the elastic stiffness of In0.16Al0.84As is higher than that of In0.16Ga0.84As and less strain is removed from the dots with In0.16Al0.84As SRL. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126097
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  • 8
    Electronic Resource
    Electronic Resource
    Role of excess As in low-temperature grown GaAs subjected to BCl3 reactive ion etching (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3032-3034 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The role of excess As in low-temperature (LT) grown Be doped, undoped and Si-doped GaAs subjected to BCl3/Ar reactive ion etching has been investigated using transmission electron microscopy and atomic force microscopy. Etching rate and the extent of ion damage are found to depend on the doping type and thermal treatment. For as-grown LT-GaAs, significant decrease in etching rate is observed as the dopant is changed from Be to Si. Thermal treatment by rapid thermal annealing slightly increases the etching rate of GaAs grown at low temperature while it increases the etching rate significantly for the samples grown at normal temperature. In addition, as-grown LT-GaAs also exhibits superior resistance to the ion damage of reactive ion etching. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125224
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  • 9
    Electronic Resource
    Electronic Resource
    Cell cycle-dependent migration of the DNA-binding protein Ku80 into nucleoli
    Amsterdam : Elsevier
    Experimental Cell Research 199 (1992), S. 262-268 
    Details
    ISSN: 0014-4827
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0014-4827(92)90433-9
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  • 10
    Electronic Resource
    Electronic Resource
    The Self-Cleaving Activity of Nucleolin Determines Its Molecular Dynamics in Relation to Cell Proliferation
    Amsterdam : Elsevier
    Experimental Cell Research 208 (1993), S. 48-53 
    Details
    ISSN: 0014-4827
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1006/excr.1993.1221
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