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  • 1
    Electronic Resource
    Electronic Resource
    Adsorption-controlled growth of Bi4Ti3O12 by reactive MBE (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2817-2819 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Adsorption-controlled conditions have been identified and utilized to grow epitaxial bismuth titanate thin films by reactive molecular beam epitaxy. Growth of stoichiometric, phase pure, c-axis oriented, epitaxial films is achieved by supplying a large overabundance of bismuth and ozone continuously to the surface of the depositing film. Titanium is supplied to the film in the form of shuttered bursts each containing a three monolayer dose of titanium to grow one formula unit of Bi4Ti3O12. It is seen from measured film thickness, Rutherford backscattering spectrometry composition measurements, monitoring of reflection high-energy electron diffraction half-order intensity oscillations during growth, and in situ flux measurements using atomic absorption spectroscopy that at suitable temperature and ozone background pressure, the titanium sticking coefficient approaches one and the excess bismuth desorbs from the surface. Film growth proceeds by the formation of mounds whose step heights are predominantly integral multiples of a half-unit cell.© 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121468
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  • 2
    Electronic Resource
    Electronic Resource
    In situ formation of YBa2Cu3Ox thin films by physical sputtering (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1163-1165 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have found that in situ superconducting Y-Ba-Cu-O thin films can be produced by sputtering without the aid of any external O2 source during deposition. The films were produced by rf magnetron sputtering from a composite target onto MgO(100) substrates heated at 650 °C. Films made in a pure Ar pressure of 24 mTorr and fast cooled in N2 ambient contain the tetragonal YBa2Cu3Ox phase with x estimated to be 6.1. Films made under the same sputtering conditions but cooled in 30 mTorr oxygen after deposition, show a superconducting transition Tc(R=0) at 71 K with an onset at 85 K. The Tc(R=0) rises to 80 K if 0.5 mTorr oxygen was added during sputtering. The experimental results provide conclusive evidence that sufficient oxygen can be incorporated into the films to form the tetragonal YBa2Cu3Ox phase simply by physical sputtering from an oxide target. The films absorb additional oxygen and transform into the orthogonal, superconducting phase when subsequently cooled in partial O2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101560
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  • 3
    Electronic Resource
    Electronic Resource
    Stacking fault induced relative dipole at type A/B NiSi2/Si (111) interfaces and its correlation to the Si (111) 7×7 subunit cell structures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1241-1243 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The change in electronic structure from a type A to a type B NiSi2/Si(111) interface is sufficient to explain the previously observed difference in the Schottky barrier heights of these two interfaces. This is supported by the observation by scanning tunneling microscopy of different contrast on the faulted triangle in a Si(111) 7×7 unit cell relative to the unfaulted one. The crystallographic differences in the two types of NiSi2/Si(111) interfaces are identical to those in two types of triangles inside a Si(111) 7×7 unit cell. A simple model with an interface dipole induced by the stacking fault is proposed to be responsible for the 0.13 eV difference in the Schottky barriers at type B NiSi2/Si(111) interfaces relative to type A interfaces. The estimated dipole change is about 0.004e− per interface bond, in good agreement with a theoretical estimation at the stacking fault of bulk Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102466
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  • 4
    Electronic Resource
    Electronic Resource
    Cu valence and the formation of high Tc superconductor oxides studied by x-ray photoemission spectroscopy on 200 A(ring) Bi-Sr-Ca-Cu oxide thin films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 377-379 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used x-ray photoemission spectroscopy to study the core level spectra of 200 A(ring) Bi-Sr-Ca-Cu oxide thin films, in the hope that the importance of the surface sensitivity of photoemission is minimized for these samples, whose thickness is only 6–7 unit cells. The samples were annealed in oxygen at temperatures ranging from 600 to 870 °C, over which temperature range the thin films are converted from an amorphous insulating phase to an ordered superconducting phase with Tc (R=0)=80 K. Regardless of the annealing temperature, the Cu 2p spectra of all films show satellite structure indicative of Cu2+ states. Even the spectrum of an as-deposited film has a satellite similar to those observed for the annealed films, including the superconducting film. The similarity of the satellite structure in the core level spectra for all films suggests that the Cu-O interactions, such as the Cu d-O p orbital charge transfer energies and the hopping integrals, remain similar when the oxides undergo the insulator-superconductor transition through high-temperature anneal. That is, the same local Cu-O interaction exists before and after the superconducting phase sets in. This implies that the Cu valence alone does not determine the properties of high Tc superconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100971
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  • 5
    Electronic Resource
    Electronic Resource
    Ion beam patterning of spin-on metalorganic precursors and formation of high Tc superconductors (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 802-804 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new technique using ion beams to produce patterned thin films of the high-temperature perovskite superconductor YBa2Cu3O7−x from spin-on metalorganic precursors is described. Spin-coated precursor films are irradiated through a stencil mask with 2.5 MeV He+ ions, developed in solvent to remove unexposed material, and the remaining patterns are pyrolyzed. Black films of YBa2Cu3O7−x with pattern dimensions on the millimeter scale exhibit orientation with the c axis perpendicular to the film after heat treatments of 990 °C for 3 min. The conductivity of a highly oriented, ∼0.4-μm-thick patterned film is characterized by onset of the superconducting transition at 84 K and zero resistivity at 68 K, similar to those of an unirradiated film given the same thermal treatment. Studies on the nature of the ion beam exposed material are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100564
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  • 6
    Electronic Resource
    Electronic Resource
    Growth of 200 A(ring) superconducting Bi-Sr-Ca-Cu oxide thin films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 769-771 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Preferentially cˆ-axis oriented superconducting Bi-Sr-Ca-Cu oxide films as thin as 200 A(ring) have been successfully grown on MgO(100) substrates. Even though such thin films are only 6–7 unit cells thick, they still exhibit bulk superconducting properties. These films typically exhibit a superconducting transition temperature at 80 K and a critical current density of 105 A/cm2 at 50 K as determined by transport measurements. The ability to grow even thinner films is controlled by the exact film stoichiometry and the smoothness of the substrate surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101476
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  • 7
    Electronic Resource
    Electronic Resource
    General Anesthetic Action on γ-Aminobutyric Acid—Activated Channels (1991)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 625 (1991), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1991.tb33839.x
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  • 8
    Electronic Resource
    Electronic Resource
    Effects of adenylylation on the biosynthetic properties of the glutamine synthetase from Escherichia coli (1970)
    s.l. : American Chemical Society
    Biochemistry 9 (1970), S. 633-649 
    Details
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bi00805a025
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  • 9
    Electronic Resource
    Electronic Resource
    Electron spin resonance of CrO3−4 in Na2SO4 (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 88 (1988), S. 2862-2863 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A CrO3−4 center with the z2 ground state is detected by ESR in Na2SO4 crystals grown at 80 °C, doped with CrO2−4, and gamma irradiated. A CrO3−4 center with the x2−y2 ground state, interacting with two chemically equivalent but magnetically distinguishable protons, is detected in crystals grown at 40 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.453978
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  • 10
    Electronic Resource
    Electronic Resource
    Urinary Carboxyglutamic Acid and Serum Osteocalcin in Cooley's Anemia (1990)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 612 (1990), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1990.tb24361.x
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