ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Slow positron beam are used to study defect structures in Co doped and undoped ZnO films prepared by Pulsed Laser Deposition (PLD) at 400℃, 600℃, 700℃ on c-plane sapphire. Comparing with ZnO samples, Co doped ZnO samples have larger positron effective diffusion length (Leff), which change in different tendencies depending on the growth temperature. Crystal structures of the samples are investigated by X-ray diffraction (XRD) and wurtzite ZnO could be observed in Co doped samples
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.607.102.pdf
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