Publication Date:
2016-07-22
Description:
Author(s): Yaohua Tan, Michael Povolotskyi, Tillmann Kubis, Timothy B. Boykin, and Gerhard Klimeck It is critical to capture the effect due to strain and material interface for device level transistor modeling. We introduce a transferable s p 3 d 5 s * tight-binding model with nearest-neighbor interactions for arbitrarily strained group IV and III-V materials. The tight-binding model is parametrized wi… [Phys. Rev. B 94, 045311] Published Thu Jul 21, 2016
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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