Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
66 (1995), S. 1915-1917
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
ZnS1−xTex (0≤x≤1) single-crystal alloy films were grown on GaAs and Si substrates by molecular beam epitaxy. Strong photoluminescence in the yellow to blue light region, with room-temperature external quantum efficiencies of 2%–4% at an unoptimized excitation wavelength of 365 nm, was observed. The enhancement of luminescence was attributed to the presence of Te isoelectronic hole traps in the films. Strong bowing of the band-gap energy as a function of composition x was also observed, with the minimum near x=0.7. The line width as well as the Stokes shift of the luminescence peak from the band edge were found to increase as Te composition decreases. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.113275
Permalink
|
Location |
Call Number |
Expected |
Availability |