ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 590-595 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A spatially discrete grain-boundary model for characterizing polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) is developed. This model was formulated for an interface state localized at the grain boundary. Threshold voltage (Vth) variation was analyzed using the model by changing the trap density and the location and number of grain boundaries in the poly-Si channel. The Vth shifts were found to be linearly dependent on the trap density (NGB) at the grain boundary and almost independent of the boundary location. The dependence of Vth on NGB was 0.15 V per trap density of 1012 cm−2 in long-gate TFTs. Since grain formation in the poly-Si channel is not controllable (it tends to be random), the threshold-voltage shift (ΔVth) predicted by the simulation will appear as statistical fluctuation in device fabrication. Simulation of the Vth fluctuation ranges showed that ΔVth increases with a decrease in channel length and will exceed 0.2 V in TFTs with a channel length of 1 μm or less when there is one grain boundary in the channel region and the trap density is 1012 cm−2. However, adding a moderately doped p region near the source in an n-channel TFT will suppress threshold-voltage fluctuation, even when the grain formation is uncontrollable, as we have theoretically demonstrated through simulation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8064-8069 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Anomalous currents (I) in worst-bit cells in high-density dynamic random-access memories are theoretically analyzed with temperature (T) as a parameter. And activation energy (Ea) is evaluated from the slopes of (log I) versus (1/T) plots. It is found that the anomaly in Ea as a function of applied bias (V), i.e., a steep decrease and saturation in Ea–V curves, can be clearly explained by introducing spatial locality in the deep-trap distribution. Moreover, it is shown that the anomaly in Ea–V curves occurs synchronously with an anomaly of current; i.e., a steep increase and saturation in I–V curves. Simulated electron-hole distributions clarify the physical mechanism of these anomalies; that is, when applied reverse bias is low and the spatially localized deep traps are outside of the depletion layer, Ea is near Eg because of electrical nonactivity of deep traps. And when applied reverse bias is high and the deep traps are spatially included in the depletion layer, carriers generated from deep-trap centers dominate the carrier transport and Ea is around the energy level (Et) of deep traps located near the midgap. The steep decrease in Ea is thus a result from mixing of the two energy levels (Eg and midgap). Further, it is found that deep-trap-assisted tunneling under a high-field condition reduces Ea. The activation energy defined by the slope in the (log I) versus (1/T) plots is therefore not considered a direct indicator of real Et. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1443-1448 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A two-dimensional model of a strained Si/Si1−xGex transistor with δ-doped layers was developed. A semiclassical drift diffusion model is used to study the effects of different conduction-band offsets and variation of the distance between the Si channel and an n-type δ-doped layer as well as the thickness of this δ-doped layer at room temperature. We found that a large conduction-band offset, or a large Ge concentration, confines electrons more strongly to the Si channel. These factors raise the drain current when the doping level per unit area is constant. The area between the Si channel and the δ-doped layer and the δ-doped layer itself forms a barrier to electrons donated by the donor atoms in the δ-doped layer. Hence, the smaller the distance between the Si channel and the δ-doped layer and the thinner the δ-doped layer, the larger the number of electrons in the Si channel. Through the present analysis, an optimum design concept is clarified for device applications of Si/Si1−xGex systems. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3603-3607 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The source resistance of a heterojunction field-effect transistor (HFET), whose reduction is mandatory for high-performance devices, consists of an ohmic contact resistance and an access resistance. The access region is located between the geometrical source and the geometrical source side of the gate contact. By means of a quantum-mechanical modeling program, the effect of changes in layer structure in the access region of a HFET is studied. A new heterojunction structure using a Si planar doped layer is designed to improve the linearity and reduce the access resistance by more than ten times for a specific transistor layout. Thanks to the higher sensitivity of the modeling program to structural information, the contribution of the tunneling current and the change of equilibrium as a function of temperature is investigated. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1492-1494 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new concept in one-dimensional electron-gas (1DEG) systems is proposed by introducing periodic bending of the heterointerface of an n-AlGaAs/u-GaAs modulation-doped structure. The carrier densities and the electrostatic potential of this system are numerically analyzed based on the classical drift-diffusion model where the doping concentration ND of n-AlzG1−zAs is 1.0×1018 cm−3, the aluminum molar fraction z of AlzGa1−zAs is 0.3, the carrier density of p-type GaAs is 1.0×1014 cm−3, and the bending angle of the heterointerface is 90°. We found that electrons are more accumulated in convex regions of the u-GaAs layer than in concave ones, and the electron density in a convex region is about twice that in the conventional two-dimensional electron-gas structure. We can treat this high density of electrons as a 1DEG channel for field-electron transistors (FETs) when the period of the bending interface is about 850 A(ring).
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 7
    ISSN: 1573-4919
    Keywords: extremely low frequency magnetic fields ; gene expression ; neuron derived orphan receptor-1 ; signal transduction ; Chinese hamster ovary K1 cells
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology , Medicine
    Notes: Abstract Enhanced expression of neuron derived orphan receptor (NOR-1) gene was observed by exposure of Chinese hamster ovary K1 (CHO-K1) cells to an extremely low frequency magnetic field (ELFMF) of 50 Hz at 400 mT, but not at 5 mT. The enhanced expression, reaching the maximum at 6 h, was transient and reduced to the control level after exposure to 400 mT ELFMF for 24 h. The NOR-1 expression induced by treatment with forskolin and TPA was further enhanced by the simultaneous treatment with 400 mT ELFMF, in which the maximum response was at 3 h. The NOR-1 expression by these treatments was induced more earlier than that by 400 mT ELFMF alone. When cells were treated with an inhibitor of the protein kinase C (calphostin C or crocetin) and Ca2+ entry blockers (nifedipin and dantrolen) during the 400 mT ELFMF exposure, the enhanced NOR-1 expression was not observed. Exposure of CHO-K1 cells to the high-density 400 mT ELFMF may affect the signal transduction in the cells, resulting in the enhanced NOR-1 gene expression.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 8
    ISSN: 1432-0878
    Keywords: Key words Annexin 5 ; Immunocytochemistry ; Pituitary ; Ovary ; Testis ; Adrenal gland ; Thyroid gland ; Rat (wistar)
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract  Annexin 5, a unique calcium- and phospholipid-binding protein, has been investigated for its specific distribution in rat endocrine organs by immunocytochemistry with a specific antiserum to recombinant rat annexin 5. Follicular epithelial cells and parafollicular cells of the thyroid gland, adrenocortical cells of the zona fasciculata and zona reticularis, luteal cells, testicular interstitial cells, and Sertoli cells were shown to contain annexin 5. To examine whether the synthesis of annexin 5 would be affected by a change in humoral signal, the distribution of annexin 5 in the anterior pituitary was examined three weeks after ovariectomy. The withdrawal of ovarian hormones induced huge castration cells in the anterior pituitary gland, which contained abundant annexin 5. Annexin 5 was not detected in the pineal gland, the parathyroid gland, the islet of Langerhans, the adrenal medulla, zona glomerulosa cells, and granulosa cells. Since annexin 5 was shown to exist in many of the endocrine tissues examined, to be localized in specific cell types, and to be abundant in castration cells, it is suggested that annexin 5 contributes to secretory cell functions, which may be common to endocrine cells secreting chemically different hormones.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 9
    ISSN: 0006-3592
    Keywords: Chemistry ; Biochemistry and Biotechnology
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Biology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Corynebacterium hydrocarboclastus KY 8835 grew in the acetate medium and accumulated 28mM Corynecins which was the highest production yield among the processes using various carbon sources. Selective production of Corynecin I (over 90% of all Corynecins), which had been desired for increase of the product yield, was achieved in this acetate medium. To keep the concentration of acetate, ammonium, and phosphate ions in the optimum range throughout the fermentation, a solution containing CH3COOH (50%), CH3COONH4 (9%), and KH2PO4(0.2%) was fed continuously to the culture medium as the pH controlling agent. The addition of KCl (1%) and NaCl (1%) to the medium at 12 hr after inoculation stimulated the production of Corynecins.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Journal of Applied Polymer Science 54 (1994), S. 1625-1630 
    ISSN: 0021-8995
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Deformation behavior of polytetrafluoroethylene (PTFE) films was investigated by thermomechanical analysis (TMA) under various tensile stresses (σ) up to 1.15 MPa in the temperature range from room temperature to 360°C. In the heating process above σ ≈ 0.25 MPa, a contraction of the PTFE film occurs in the melting temperature region. In the cooling process above σ ≈ 0.05 MPa, an elongation occurs in the crystallization temperature region, and above σ ≈ 0.5 MPa, it reaches 20-30% of the original length of the film. The PTFE films in the melt state above σ ≈ 0.5 MPa contract with increasing temperature up to 360°C and elongate with decreasing temperature. For the films that underwent deformation in the TMA, the crystalline orientation and the surface morphology were investigated by wide-angle X-ray diffraction and scanning electron microscopy, respectively. The degree of crystalline orientation in the deformed films increases with increasing σ and approaches a plateau at σ ≈ 0.4 MPa. On the surface of the deformed films, alignment of the bands and deformation of granules, which are formed by heat treatment above the melting point, are observed. © 1994 John Wiley & Sons, Inc.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...