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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4989-4991 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By utilizing the aromatic molecule xylene, we have prepared hydrogenated amorphous silicon carbide (a-SiC:H) for the first time from an aromatic carbon source. Good-quality films are obtained, over a wide range of optical band gaps from 2.2 to 3.5 eV and carbon content from 0.4 to 0.9 atomic fraction. Infrared measurements indicate that the films contain an underlying inorganic network of bonded Si, C, and H atoms, as found in a-SiC:H prepared from conventional carbon sources, but in addition, have substantial organic character, evidenced by a large amount of both aromatic and olefinic sp2 carbon bonding.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2669-2671 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By annealing H-rich intrinsic a-Si:H films at 340 °C in a hydrogen atmosphere, we have prepared a series of samples with varying hydrogen content (CH), but essentially constant photoconductivity, Urbach energy, and microstructure. In this way, we have been able to eliminate some of the interfering factors contributing to the light-induced effect, thus enabling the influence of CH to be determined. A strong correlation is found between the stability and CH, supporting the involvement of hydrogen in the light-induced mechanism.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1226-1228 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of exposure to high-intensity Xe light pulses at moderate temperatures on the electrical properties and light-induced degradation of intrinsic a-Si:H films and a-Si two-stacked tandem solar cells is described. Little change is observed in the dark electrical properties of the films and in the efficiency of the solar cells, while the photoconductivity of the films is lowered. The light stability of both the films and solar cells is considerably improved, such that the degradation of a light pulse treated solar cell is almost 30% smaller than its dark reference after 23 h under AM1.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3294-3296 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical, electronic, and structural properties of high-quality a-Si:H and a-Si:D films are compared. While having essentially similar electrical properties, a-Si:D shows higher stability of the photoconductivity (σph) under illumination, and faster thermal recovery of the degraded σph. These differences may originate from differences in the Si—Si and Si—H/D bonding structures, indicated by Raman scattering and infrared measurements. In agreement, single-junction solar cells with an intrinsic a-Si:D layer show smaller light-induced changes than a-Si:H cells.
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  • 5
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Plant breeding 123 (2004), S. 0 
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: In order to determine the genetic relationship between wild and cultivated radish species, and those among the cultivated species, structural and sequence variations in the mitochondrial orfB gene region were studied in one cultivated and two wild species of Raphanus. Using PCR amplification patterns and RFLP of a PCR product of the region, 232 wild and 420 cultivated radish plants were classified into one of three types of orfB variation. The wild radish (especially the Japanese one) showed large polymorphism in each population with eight of 13 Japanese populations studied containing all three types, whereas cultivars were generally monomorphic. Although type 1 having Ogura male sterile cytoplasm was present with the highest frequency in Japanese wild radish, most cultivars were divided into type 2 or 3 with normal cytoplasm. Type 2 was widely distributed in European, Chinese and major Japanese varieties, while some Chinese varieties and several Japanese local radishes had type 3 cytoplasm. The comparison provides valuable information about the origin and differentiation of cultivated radishes and the relationship between cultivated and wild radishes.
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  • 6
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: The orf138 gene, which is specific to Ogura male-sterile cytoplasm, was analysed in mitochondrial DNA (mtDNA) of the wild radish, Raphanus raphanistrum, by polymerase chain reaction (PCR), Southern hybridization and sequencing. The effect of R. raphanistrum cytoplasm on the expression of male sterility was also examined in progeny with R. sativus. A PCR-aided assay and Southern hybridization revealed that three out of six strains analysed included plants with orf138. The sequence of wild type orf138 was same as that of Ogura, except for one or two nucleotide substitutions. Southern hybridization showed a novel mtDNA configuration in R. raphanistrum, in addition to the normal and Ogura types identical to those in R. sativus.Among interspecific hybrids, all the F1 had normal pollen fertility. In the F2 progeny between female wild plants having orf138 and the maintainer of Ogura male sterility, male-sterile plants were segregated, fitting the ratio of 3 fertile: 1 sterile plant. R. raphanistrum has cytoplasm that induces male sterility in radishes, and contains a dominant fertility restorer gene.
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  • 7
    ISSN: 0304-3991
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Natural Sciences in General , Physics
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  • 8
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Biochemical and Biophysical Research Communications 205 (1994), S. 746-750 
    ISSN: 0006-291X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 12 (1979), S. 141-146 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: The surface quality of copper whiskers grown by the hydrogen reduction of cuprous iodide has been investigated by measuring Bragg-case diffraction curves by means of X-ray triple-crystal diffractometry with Cu Kα1 radiation. The observed half-widths vary from whisker to whisker, probably owing to the existence of a very thin surface layer contaminated with oxygen and/or impurity atoms. When the surface is good in quality, the observed diffraction curves clearly show the asymmetry of the intensity profile and fit well with the convoluted curve calculated with the dynamical theory of X-ray diffraction for a perfect single-crystal. From the half-width of the diffraction curve showing the best fitting with the calculated curve, the f0220 value has been determined as 16.75 ± 0.08 with a dispersion correction f′ = −2.019, in excellent agreement with the theoretical value 16.76 given by Freeman & Watson [Acta Cryst. (1961), 14, 231–234].
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  • 10
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 14 (1981), S. 223-225 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: A method to determine the exact fiber identity periods (FIP) of polyamides from the X-ray meridional reflections has been found, which is essential especially for the γ forms of polyamides with large values of the FIP. The basic concept of this method is that the γ form has two kinds of reflections, the peak positions of which are shifted from the corresponding reciprocal-lattice points to the wide- and small-angle directions, so that the true FIP is between the maximum and minimum values calculated from the former and latter kinds of reflections, respectively. For an example, this method was applied to polylauryllactam (nylon 12) and a value of 31.92±0.02 Å was obtained as a more precise FIP.
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