Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
63 (1993), S. 3506-3508
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We demonstrate a successful growth of GaP1−xNx alloys on GaP by metalorganic vapor phase epitaxy (MOVPE). This alloy system is predicted to have an extremely large miscibility gap, ranging from x=0.0000003 to 0.9999997 at 700 °C. However, metastable alloys (x≤0.04) have been obtained at the growth temperature of 630–700 °C. We focused on the growth condition dependence of solid composition (x). The nitrogen incorporation increases with decreasing growth temperature. It also increases with increasing growth rate, possibly due to nonequilibrium circumstances in the MOVPE growth. Low-temperature photoluminescence (PL) measurements show that the band gap of GaP1−xNx shifts to lower energy with increasing x.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.110109
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