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Spiral growth of few-layer MoS2 by chemical vapor deposition (2016)

X. Dong, C. Yan, D. Tomer, C. H. Li and L. Li

American Institute of Physics (AIP)

In: Applied Physics Letters

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Publication Date: 2016-08-06

Description: Growth spirals exhibit appealing properties due to a preferred layer stacking and lack of inversion symmetry. Here, we report spiral growth of MoS 2 during chemical vapor deposition on SiO 2 /Si and epitaxial graphene/SiC substrates, and their physical and electronic properties. We determine the layer-dependence of the MoS 2 bandgap, ranging from 2.4 eV for the monolayer to a constant of 1.3 eV beyond the fifth layer. We further observe that spirals predominantly initiate at the step edges of the SiC substrate, based on which we propose a growth mechanism driven by screw dislocation created by the coalescence of two growth fronts at steps.

Print ISSN: 0003-6951

Electronic ISSN: 1077-3118

Topics: Physics

Published by American Institute of Physics (AIP)

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