ISSN:
1662-8985
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In this work, deformation of monocrystalline silicon (Si) under nanoscratching wasinvestigated using transmission electron microscopy (TEM). The results indicated that no fractureoccurred during nanoscratching with loads ranging from 1 to 6 mN. The damaged regions inducedby nanoscratching included an amorphous Si region and a damaged crystalline Si region. DetailedTEM analyses revealed that at the lowest load of 1 mN no dislocation was observed in the damagedcrystalline region, and only stacking faults were observed at the boundary between the damagedcrystalline Si and amorphous Si. Dislocations started to nucleate along (111) planes and penetratedinto the bulk Si when the normal load was increased to 2 mN and above. Defects perpendicular tothe scratched surface were initiated when the load was greater than 4 mN. The density ofdislocations also increased rapidly with the increase of the applied load
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/40/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.41-42.15.pdf
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