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  • 1
    Electronic Resource
    Electronic Resource
    Effect of arsenic dimer species to silicon doping of GaAs layers prepared by molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 391-393 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A strong dependence of Si doping on dimer arsenic (As2) flux and substrate temperature is observed for GaAs films grown by molecular beam epitaxy. Using an arsenic effusion cell with a cracker, Si doping levels are shown to depend on the cracking efficiency and substrate temperature. With the same Si cell temperature and GaAs growth conditions, the measured carrier concentration of the grown films decreases as the cracker temperature (cracker current) is increased and this dependence becomes stronger as the substrate temperature is increased. For samples grown at 660 °C, more than a factor of four decrease of the doping concentration is observed for the cracker current changing from 5 to 6.5 A. For those grown at 560 °C, there is only a weak dependence. Evidence is given to show that carbon contamination and Si self-compensation are not the causes of this effect. The formation of volatile SixAsy compound at the substrate surface is proposed to account for this phenomenon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104644
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  • 2
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxial growth of CoSi2 on porous Si (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1809-1811 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CoSi2 epitaxial layers with different thicknesses have been grown onto porous-Si substrates by molecular beam epitaxy. Good crystallinity is obtained for CoSi2 films thicker than 50 nm. The use of a thin buffer layer is found to be crucial in order to achieve abrupt interface and good crystallinity. Planar view transmission electron microscope images obtained from 30-nm-thick CoSi2 buffer-Si/porous-Si samples indicate that a large area of the epitaxial film is dislocation free, in contrast with a uniform distribution of misfit dislocations across relaxed CoSi2/single-crystal Si samples of the same thickness. This study suggests a possible pseudomorphic growth by using porous Si as a substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98530
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  • 3
    Electronic Resource
    Electronic Resource
    Low-threshold buried-ridge II-VI laser diodes (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2315-2317 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Blue-green (λ=511 nm) separate confinement laser structures based on lattice-matched MgZnSSe-ZnSSe-CdZnSe have been grown by molecular beam epitaxy. Wide stripe gain-guided devices have been fabricated from several such wafers. These devices exhibit room-temperature pulsed threshold current densities as low as 630 A/cm2 and threshold voltages less than 9 V. Using a novel self-aligned process that results in a planar surface, buried-ridge laser diodes have also been fabricated. These devices have demonstrated room-temperature threshold currents as low as 2.5 mA, which is more than a factor of 50 lower than that of any previously reported II-VI laser diode. Room-temperature operation at duty factors up to 50% has been demonstrated. The far-field patterns from these devices indicate single lateral mode operation, suitable for diffraction-limited applications, such as optical data storage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110511
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  • 4
    Electronic Resource
    Electronic Resource
    Microstructure and pseudomorphism in molecular beam epitaxially grown ZnCdS on GaAs(001) (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2129-2131 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have carried out an electron-microscopy-based microstructural study of molecular beam epitaxially grown ZnxCd1−xS epilayers on GaAs(001) substrates. We find that sulfur attacks bare GaAs substrates, resulting in pits that act as nucleating centers for defects that propagate into the epilayer. Such pitting may be avoided by capping the GaAs substrate with a ZnSe buffer in a sulfur-free separate growth chamber. We also investigate the pseudomorphic zinc blende to wurtzite crystal structure change in epitaxial ZnxCd1−xS and propose a microstructural model for this structural transition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110562
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  • 5
    Electronic Resource
    Electronic Resource
    〈100〉 dark line defect in II-VI blue-green light emitters (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 801-803 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have carried out a microstructural study of the 〈100〉 dark line defect that forms during degradation of II-VI blue-green light emitters. We find that these defects lie in or near the ZnCdSe quantum well and do not correspond to a readily observable dislocation network in transmission electron microscopy studies. We speculate that they may consist of point defects or small point defect complexes. We have also carried out estimates of point defect migration rates during device operation that can give rise to such degradation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112234
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  • 6
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxial growth of CdZnS using elemental sources (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2935-2937 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the first molecular beam epitaxial (MBE) growth of CdZnS on (100) GaAs substrates using elemental Zn, Cd, and S sources. Single crystal cubic CdZnS layers lattice matched to GaAs have been successfully prepared. The competition in incorporation between Cd and Zn under different sulfur flux conditions is investigated. Under appropriate growth conditions, the Cd1−xZnxS composition is directly related only to the ratio of the group II beam equivalent pressures. The background sulfur in the MBE growth chamber is found to etch the freshly thermally cleaned GaAs substrates and generate high density of pits on the surfaces. Methods to prevent the sulfur etching are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110278
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  • 7
    Electronic Resource
    Electronic Resource
    Dependence of the density and type of stacking faults on the surface treatment of the substrate and growth mode in ZnSxSe1−x/ZnSe buffer layer/GaAs heterostructures (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3298-3300 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic dependence of the density and type of stacking fault defects with substrate surface chemistry and film growth mode was observed in ZnSe-based films grown on GaAs substrates. Namely, the density of Frank-type stacking faults is very large for films grown on Ga-rich surfaces, but is very low for films grown on As-stabilized surfaces exposed to Zn prior to the growth of the film. In contrast, the density of Shockley-type stacking faults increases for films grown by 3D growth mode at the initial stages of growth, but decreases greatly if the films are grown by the layer-by-layer growth mode. Films with stacking fault densities as low as 104/cm2 were obtained by growing the films by the layer-by-layer growth on GaAs epilayers with As-stabilized surfaces that were exposed to Zn for 1–2 min prior to the growth of the films. © 1995 American Institute of Physics. [S0003-6951(95)00548-6]
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115226
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  • 8
    Electronic Resource
    Electronic Resource
    Wide band gap MgZnSSe grown on (001) GaAs by molecular beam epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3462-3464 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report molecular beam epitaxial study of wide band gap ((approximately-greater-than)2.9 eV at room temperature) MgZnSSe on (001) oriented GaAs using ZnS, Mg, Zn, and Se sources. Although the growth is under group II rich condition, the compositions of S and Mg in the MgyZn1−ySxSe1−x are linear functions of flux ratios, PZnS/PSe and PMg/PZnS, up to 35%, respectively. Mirrorlike surface and low defect density (5×104 cm−2) MgZnSSe with band gap close to 3.1 eV can be achieved. Composition modulation, tweedlike contrasts and strain contrasts in the MgZnSSe are observed from transmission electron microscope analysis. For the first time, a miscibility gap at high S and Mg compositions is reported. Nitrogen-free radicals are used as the p-type dopant for the doping study. For the MgZnSSe with room-temperature band gap energy higher than 2.9 eV, the net acceptor concentration decreases as the band gap energy increases. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113388
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  • 9
    Electronic Resource
    Electronic Resource
    Low-temperature-processed (150–175 °C) Ge/Pd-based Ohmic contacts (ρc∼1×10−6 Ω cm2) to n-GaAs (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 509-511 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed low resistance (ρc∼1×10−6 Ω cm2) Ge/Pd-based (the Au/Ge/Pd and the Ag/Ge/Pd contacts) Ohmic contact schemes processed at temperatures 150–175 °C to n-GaAs (n∼1×1018 cm−3). The Ohmic contact formation mechanism can be rationalized in terms of the solid phase regrowth (SPR) principle and the interdiffusion between Au (or Ag) and Ge. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114552
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  • 10
    Electronic Resource
    Electronic Resource
    Photodegradation of CdxZn1−xSe quantum wells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 358-360 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence imaging was used to study photodegradation in CdZnSe quantum wells, important to II-VI based blue-green light emitter technology. The observed degradation microstructure evolves similarly to features observed during CdZnSe based LED and laser operation. Degradation is shown to emanate from pre-existing defects to form dark line defects along the 〈100〉 directions. We report an observation of a mobile defect in II-VI materials that is the precursor to the 〈100〉 dark line defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114212
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