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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2660-2668 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zone melting recrystallization (ZMR) of polycrystalline silicon on SiO2 can offer an interesting, i.e., cheaper, alternative to the dielectric isolation technology used for high-voltage integrated circuits or smart power devices. For that purpose crystalline Si layers of 10–15 μm thickness are needed. In this work a mercury-arc lamp stripheater was used to recrystallize 10 μm thick polycrystalline silicon films. In unseeded layers, grain boundaries and subgrain boundaries appeared. By applying seeding, single crystalline areas of at least 1 mm by 1 mm were obtained. In these layers stacking faults were revealed as being the major crystal defect. In ZMR oxygen, nitrogen, and carbon are the major impurities which are incorporated into the silicon either intentionally or unintentionally. Among these impurities, nitrogen and carbon are believed to play a crucial role in promoting the wetting of the insulator and cap layer by liquid silicon. In this paper the distribution and transport of oxygen and nitrogen during ZMR are studied. It is shown that nitrogen can cause dendritic growth and that oxygen is unlikely to do so.
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1318-1320 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a promising method for obtaining Pb(Zr, Ti)O3(PZT) layers with excellent endurance and pulse-switching properties on RuO2 electrodes using the sol–gel method. As the substrate temperature during reactive sputtering of the RuO2 bottom electrode layer is reduced, the (111) PZT texture component becomes more pronounced, an effect attributed to the change from columnar to granular RuO2 film morphology. Reducing the residual PZT (100) and (101) texture components was found to be a necessary condition for obtaining optimal pulse switching and endurance properties of the layers. Highly (111)-oriented PZT layers, obtained on RuO2 grown at 150 °C exhibit a net switched charge of 〉60 μC/cm2 during pulse measurement and 〈10% degradation after 1011 fatigue cycles. © 2000 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5196-5202 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The explosive crystallization of Si3N4 layers deposited on silicon samples during laser melting of the silicon is investigated. The crystallization threshold is defined as the minimal laser-beam power to start crystallization. The precipitate-initiator hypothesis which states that the explosive crystallization is initiated by the formation of Si3N4 precipitates in the molten zone is formulated. Based on this hypothesis the dependency of the crystallization threshold on the scan conditions and the sample structure can be completely and consistently explained. Methods to prevent crystallization are formulated.
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study is presented of silicon-on-insulator (SOI) films obtained by laser recrystallization of polysilicon films using silicon nitride or oxynitride as a capping layer material and with either a continuous or a periodic antireflective capping structure. Different laser scan conditions are used. Electrical characterization of these recrystallized Si layers is performed on five-terminal SOI metal-oxide-semiconductor field-effect transistors by directly probing the front and back interface quality on the device level using the charge pumping technique. By this, a correlation between interface trap density and channel mobility could be determined. While the characteristics of both front and back Si-SiO2 interfaces depend on the crystalline quality (presence of grain boundaries) of the recrystallized film, the capping layer material used mainly affects the back interface properties. Both nitride and oxynitride capping layer materials introduce large amounts of nitrogen impurities in the molten silicon which can be expected to cause a deterioration of the interface quality. In case of a nitride capping layer, the (back) interface trap density is indeed found to be very dependent on the structure of the capping layer and on the actual laser recrystallization conditions, whereas in the case of an oxynitride capping layer no deterioration of the interface characteristics takes place for any scanning condition applied. The incorporation and the segregation of nitrogen impurities in the SOI structure is discussed supported by secondary ion mass spectrometry measurements of the impurity profiles and which qualitatively accounts for the observed dependencies. It is shown that even with a silicon nitride capping layer, laser-recrystallized SOI layers having good electrical properties can be obtained.
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  • 5
    ISSN: 0014-5793
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 0014-5793
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Nuclear Inst. and Methods in Physics Research, B 26 (1987), S. 105-111 
    ISSN: 0168-583X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Nuclear Inst. and Methods in Physics Research, B 26 (1987), S. 399-405 
    ISSN: 0168-583X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1432-2242
    Keywords: Key words Microsatellites ; Lycopersicon esculentum ; STMS ; Cultivar identification ; Fluorescent detection
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract  The objectives of this study were to evaluate the usefulness of a fluorescent-analysis method for genotyping PCR-based tomato microsatellite markers (or STMSs) and to establish the value of these markers to generate unique DNA profiles of tomato cultivars. The analyses were performed using forward primers labelled with a fluorochrom and using an ALF express DNA sequencer. In general, analysis of the tomato STMSs revealed distinct allelic peaks. PCR artefacts like stuttering and differential amplification were observed for several tomato STMS markers, but in most cases these artefacts did not seriously hamper allele designation. Comparison of fluorescent and silver-stained allelic profiles revealed a similar distribution of alleles among the test cultivars. Sixteen tomato cultivars were DNA-typed for 20 selected STMS markers using the fluorescent approach. Length polymorphism among the PCR products was detected with 18 of these markers, yielding gene diversity values from 0.06 to 0.74. The number of alleles per microsatellite locus ranged from 2 to 8. As few as four STMSs were sufficient to differentiate between all 16 cultivars, indicating that these markers are especially suitable for a species like tomato which has low levels of variation as detected by other types of markers.
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Theoretical and applied climatology 28 (1980), S. 63-71 
    ISSN: 1434-4483
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences , Physics
    Description / Table of Contents: Zusammenfassung Es wird eine kurze Übersicht über einfache Regressionsmodelle für die Beziehung zwischen Strahlungsbilanz (Rn) über natürlichen Oberflächen zur Einstrahlung (St) oder zur Globalstrahlungsbilanz (Sn) gegeben. Als Ausgangspunkt für die Analyse der Strahlungsbilanzwerte, die gleichzeitig über drei Arten von Heideland unter verschiedenen atmosphärischen Bedingungen erhalten worden sind, wird der langwellige Austauschkoeffizient von Gay verwendet. Eine hochsignifikante inverse Beziehung zwischen den Werten dieses Koeffizienten und den Tagessummen der Globalstrahlungsbilanz wird dargelegt. Diese wird aus der Nichtlinearität der Abhängigkeit des langwelligen Strahlungsverlustes von der solaren Wärmebelastung erklärt. Während letztere stärker zunimmt, bleibt der durch langwellige Strahlungsbilanz ausgegebene Anteil nicht konstant, wie in linearen Modellen angenommen wird, sondern variiert mit der Größe vonSn. Dieses Ergebnis wird versuchsweise durch den Ersatz des linearen Regressionsmodells durch ein quadratisches dargestellt. Unter den langwelligen Austauschcharakteristiken der betrachteten Pflanzenbestände existieren kleine aber beständige Differenzen, die nicht leicht aus fremden Faktoren erklärt werden können und daher aus physikalischen und physiologischen Verhältnissen der Oberflächen selbst resultieren müssen.
    Notes: Summary A concise review is presented of the simple regression models used to relate net radiation (Rn) over natural surfaces to incoming (St) or net (Sn) global radiation. As a starting point for the analysis of radiation balance data obtained simultaneously over three types of heathland vegetation under a variety of atmospheric conditions, Gay's longwave exchange coefficient (λ) was used. A highly significant inverse relationship is demonstrated between values of this coefficient and daily totals of net solar radiation. This is explained in terms of non-linearity in the dependence of the net longwave loss upon net solar heat load: as the latter grows larger, the proportion disspated by net longwave radiation does not remain constant, as assumed in the linear models, but instead varies with the magnitude ofSn. This finding is tentatively formalized by replacing the linear regression model by a quadratic one. Among the longwave exchange characteristics of the plant stands considered, small, but consistent differences are shown to exist, which cannot be readily explained by extraneous factors and must therefore result from physical and physiological properties of the surfaces themselves.
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