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  • 1
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    In:  EPIC3Physiological and Biochemical Zoology, 83(5), pp. 808-826
    Publication Date: 2019-07-16
    Repository Name: EPIC Alfred Wegener Institut
    Type: Article , isiRev
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  • 2
    Publication Date: 2022-05-26
    Description: Author Posting. © The Authors, 2005. This is the author's version of the work. It is posted here by permission of Elsevier B. V. for personal use, not for redistribution. The definitive version was published in Deep Sea Research Part I: Oceanographic Research Papers 52 (2005): 2315-2332, doi:10.1016/j.dsr.2005.08.004.
    Description: A Video Plankton Recorder (VPR) and remotely operated vehicle (ROV) were utilized on three cruises in the oligotrophic North Pacific Subtropical Gyre (NPSG) between 1995 and 2002 to quantify the size and abundance of marine snow and Rhizosolenia diatom mats within the upper 305 m of the water column. Quantitative image analysis of video collected by the VPR and an ROV-mounted particle imaging system provides the first transect of marine snow size and abundance across the central North Pacific gyre extending from 920 km NW of Oahu to 555 km off Southern California. Snow abundance in the upper 55 m was surprisingly high for this oligotrophic region, with peak values of 6.0-13.0 x 103 aggregates m-3 at the western and eastern-most stations. At stations located in the middle of the transect (farthest from HI and CA), upper water column snow abundance displayed values of ~0.5-1.0 x 103 aggregates m-3. VPR and ROV imagery also provided in-situ documentation of the presence of nitrogen-transporting, vertically migrating Rhizosolenia mats from the surface to 〉300 m with mat abundances ranging from 0-10 mats m-3. There was clear evidence that Rhizosolenia mats commonly reach sub-nutricline depths. The mats were noted to be a common feature in the North Pacific gyre, with the lower salinity edge of the California Current appearing to be the easternmost extent of their oceanic distribution. Based on ROV observations at depth, flux by large (〉1.5 cm) mats is revised upward 4.5 fold, yielding an average value of 40 µmol N m-2 d-1, a value equaling previous estimates that included much smaller mats visible only to towed optical systems. Our results suggest that the occurrence across a broad region of the NPSG of particulate organic matter (POM) production events represented by high concentrations of Rhizosolenia mats, associated mesozooplankton, and abundant detrital marine aggregates may represent significant stochastic components in the overall carbon, nitrogen and silica budgets of the oligotrophic subtropical gyre. Likewise, their presence has important implications for the proposed climate-driven, ecosystem reorganization or domain shift occurring in the NPSG.
    Description: This project was primarily supported by NSF Biological Oceanography Program grant OCE-9423471 to C. Pilskaln, OCE-9415923 and OCE-9414372/OCE-0094591 to T. Villareal, and assisted by OCE-9314533 to D. Caron.
    Keywords: Biogeochemical cycles ; Carbon cycle ; Nitrogen cycle ; Particle flux ; North Pacific Subtropical Gyre ; 24–32°N ; 168–123°W
    Repository Name: Woods Hole Open Access Server
    Type: Preprint
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4463-4466 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: When annealed, thin amorphous deposits of highly lattice mismatched materials provide specular crystalline surfaces for epitaxy. Mismatch strain is predominantly relieved by misfit dislocations propagating in the plane of the interface, so that resulting films have low threading dislocation densities. We demonstrate the application of this concept to the growth of (001) oriented CdTe epitaxy on (001) GaAs. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4444-4448 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamic equilibrium between P2, As2, and AsP at 1000 °C has been studied by mass spectrometry of fluxes from a double effusion cell. From simple ion gauge measurements of heated and unheated fluxes we determined the ionization efficiency for the dimers P2 and As2 relative to the tetramers, P4 and As4. Simultaneous mass spectrometer and ion gauge measurements of the effusion fluxes allowed the relative ionization sensitivities for P2, As2, and AsP to be determined. From the mass spectrometry data it was possible to determine the equilibrium constant 1.9±0.4 and free energy −0.55 eV molecule−1 for the process As2+P2(large-closed-square)2 AsP. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1664-1668 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transient behavior of the flux from a valved effusion cell containing red phosphorus is shown to result from a low elemental sublimation coefficient (α=1.3×10−7) and not from the presence of white phosphorus in the sublimator region. The criteria for generating white phosphorus in the sublimator are given. The conversion from tetramers to dimers is modeled as a function of temperature and pressure. At higher pressures, higher temperatures are needed to convert P4 to P2. Experimental results are shown to be in qualitative agreement with results from thermodynamic equilibrium arguments. © 1995 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2197-2201 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Incorporation of arsenic in molecular-beam epitaxial germanium depends upon the specific surface reconstruction. When both gallium and arsenic are incident on the surface during growth, incorporation of both species follow each other in magnitude and temperature dependence. This similarity of incorporation behavior is explained by "coercion'' effects related to chemisorbed arsenic-induced surface charge separation.
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Industrial & engineering chemistry 46 (1954), S. 1387-1390 
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4184-4187 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A PbTe flux has been used for n-type (Te) doping of GaAs, GaSb, and AlGaSb. The effects of surface accumulation and Te desorption were noticeable in secondary-ion mass spectroscopy profiles of GaAs layers grown at temperatures in excess of 540 °C. Te accumulation was not apparent in GaSb layers grown at temperatures up to 630 °C, but Te desorption occurred from GaSb at temperatures above 540 °C. The donor ionization energy of Te in AlxGa1−xSb is 44 meV for 0.4〈X〈0.5, i.e., significantly lower than the ionization energies of S or Se in similar material.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1494-1496 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of antimony molecular beams to grow passivating films on "as-grown'' GaAs surfaces is described. The substrate need not be cooled below 350 °C for deposition as in the case of As4 and not heated above 500 °C for an extended period for removal as in the case of InAs passivation. Good electrical properties of antimony passivated, air exposed, and regrown interfaces were obtained. No degradation in macroscopic defect densities were found with this technique.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 395-399 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sulphur from an electrochemical source has been used to dope GaSb grown by molecular-beam epitaxy. The incorporation of sulphur in the epilayers has been measured by secondary ion mass spectrometry, and the effects of substrate temperature during growth and of the antimony-to-gallium flux ratio have been studied.The incorporation has been found to be a strong function of substrate temperature, varying from ∼100% below 435 °C to ∼1% at 525 °C. The incorporation also increases with antimony overpressure, varying by a factor of 3 on changing the antimony-to-gallium flux ratio from 1:1 to 4:1. The substrate temperature dependence is described by a simple kinetic model. The electrical activity of the incorporated sulphur is shown to be close to 100%.
    Type of Medium: Electronic Resource
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