Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
64 (1994), S. 1094-1096
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Phosphorus-doped polycrystalline and homoepitaxial diamond films were grown using both microwave and dc plasma assisted chemical vapor deposition. P incorporation was quantified using secondary ion mass spectrometry, and was approximately ten times greater for polycrystalline films deposited using dc plasmas compared to microwave plasmas. For microwave-assisted growth, P incorporation was approximately ten times greater in polycrystalline than homoepitaxial films. These effects appear to be due to preferential incorporation at grain boundaries, since higher levels of P are measured in samples with smaller grains. The films were highly electrically resistive, with conductivities of 10−10–10−9/Ω cm at room temperature.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.110943
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