ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract CuInSe2 thin films were prepared by the selenization of metallic precursors in an atmosphere containing H2Se gas. Device-quality (homogeneous and dense films with excellent compositional uniformity) CuInSe2 films were obtained when Cu/In/Cu structures were exposed to H2Se/Ar while the temperature was ramped between 150 and 400°C. Auger studies indicated that the composition of the films was relatively uniform through their thickness. Transmission electron microscopy studies indicated that copper-rich samples exhibited large facetted grains (1–4 μm) with relatively low defect density. Indium-rich films were characterized by relatively small grains (0.2–0.8 μm), which were highly defected. CuInSe2/CdS/ZnO solar cells were fabricated using chemically etched (in KCN) copper-rich CuInSe2 absorber films, and conversion efficiencies of 5% were obtained without the use of an antireflection coating. © 1998 Kluwer Academic Publishers
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1004394328008
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