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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 65 (1961), S. 2213-2216 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6671-6675 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the measurement of the diffusion length damage coefficient (KL) and the annealing characteristics of the minority carrier diffusion length (Ln) in Czochralski-grown zinc-doped indium phosphide (InP), with a carrier concentration of 1×1018 cm−3. In measuring KL, irradiations were made using 0.5 MeV protons with fluences ranging from 1×1011 to 3×1013 cm−2. Pre-and post-irradiation electron-beam induced current measurements allowed for the extraction of Ln, from which KL was determined. In studying the annealing characteristics of Ln, irradiations were made with 2 MeV protons with a fluence of 5×1013 cm−2. Post-irradiation studies of Ln with time at room temperature, and with minority carrier photoinjection and forward-bias injection were carried out. The results showed that recovery under Air Mass Zero photoinjection was complete. Ln was also found to recover under forward-bias injection, where recovery was found to depend on the value of the injection current. However, no recovery of Ln after proton irradiation was observed with time at room temperature, in contrast to the behavior of 1 MeV electron-irradiated InP solar cells reported previously.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1384-1389 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InP is a relatively radiation-resistant semiconductor and an attractive material for solar cells exposed to radiation in Earth orbit. To better understand this useful property of InP, proton irradiation induced defects in Zn and Cd doped InP have been studied by deep level transient spectroscopy. After 2 MeV proton irradiation the defects H3, H4, and H5 were observed in lightly Zn doped InP, while the defects H3 and H5 were observed in more heavily Zn and Cd doped InP. The concentrations of the irradiation induced defects were measured and the introduction rates were calculated and compared. The activation energies of the defects were measured and corrected for the effect of electric field on carrier emission. The capture cross sections of the defects were measured directly by the pulse width variation technique. The energy levels and capture cross sections of the defects were not affected by the substitution of Cd for Zn, but the introduction rate of the defect H5 was substantially lower in Cd doped InP, suggesting that this material would make an improved solar cell in a high radiation environment.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 1209-1214 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A simple and effective method is reported for the deposition of protective coatings of titanium carbide using low-temperature (as low as 150 °C) metal–organic chemical vapor deposition. This method is based on the thermolysis of metal–organic molecules containing titanium and does not require the high temperature (〈1100 °C) involved in the standard TiC–CVD technique. Furthermore, the structure of the films produced (crystalline or amorphous) and their purity (inclusion of organic clusters or hydrogen) can be tailored easily by simple variations in the deposition parameters. This technique permits the coating of polymers and low-melting metals that are thermally too fragile for other deposition techniques. The process could be applied to produce films of other materials, e.g., niobium carbide, silicon carbide, titanium diboride, and gallium arsenide.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 238 (1974), S. 0 
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of the American Ceramic Society 80 (1997), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The examination of natural materials at the microscopic and microchemical level from a materials science perspective can occasionally suggest advances in modern materials engineering. The present paper reports on such a case: an analytical study of the detailed structure and composition of sea urchin teeth.
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 18 (1983), S. 2589-2602 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Some of the nonstoichiometric carbides of the transition metals (e.g. VC x ) undergo transformations to ordered phases at specific values of x. In a thermodynamic study of such order-disorder transformations the latent heats of the reactions VC0.833=V6C5 and VC0.875=V8C7 were measured using differential thermal analysis (DTA) and gave values of 5.7±2.8 cal g−1 and 6.0±2.4 cal g−1 (1 cal=4.1855 J), respectively. For well-annealed specimens intermediate in carbon-to-metal ratio between these two compositions, DTA indicated the coexistence of domains of both ordered phases. The implication is that the nonstoichiometric, disordered, NaCl-structure phase VC x does not represent the lowest energy state of vanadium carbide at room temperature for any value of x. This result may apply to the other isomorphic carbides, i.e. TiC x , ZrC x , HfC x , NbC x and TaC x . The measured temperatures corresponding to the onset of the transformations were 1184±12
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 22 (1987), S. 1815-1826 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Specimens of high purity polycrystalline titanium diboride, TiB2, were tested in uniaxial compression under vacuum at a strain rate of 5 × 1O−4sec−1 to determine the plastic yield behaviour. Generally, plastic deformation was detected only above 170O° C. The apparatus was able to apply u stress of 900 MPa at a maximum temperature of 2000° C. The yield stress data fit an Arrhenius function, with an apparent activation energy of O.8 eV atom−1. Dislocation glide over the Peierls barrier is thought to be the deformation mechanism, The dependence of the yield stress on the grain size obeyed the Hall-Petch relation within the bounds of experimental error. A TiB2 single crystal containing TiC precipitates was also compression - tested at 2000° C, and its yield stress was approximately four times the stress predicted by the Hall-Petch expression for e pure TiB2 single crystal, suggesting that the precipitate raises the yield stress but that the intrinsic lattice resistance is still significant. Submicrometre-sized graphite inclusions were observed in the polycrystalline specimens, but are thought not to have a direct effect on the yield stress in the temperature regime of the present study.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Cellular and molecular neurobiology 3 (1983), S. 89-111 
    ISSN: 1573-6830
    Keywords: mechanoreception ; bioelectromechanics ; membrane surface charge ; theoretical model ; electrostriction ; piezoelectricity
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary 1. The electromechanical transduction mechanisms operating in nerve membranes are considered theoretically. 2. For mechanical-to-electrical transduction (mechanical generator potentials), a model is proposed in which the surface charge on the membrane mediates stress-induced changes in the intramembrane electric field, thus opening transmembrane ion conductance channels or reducing the ion selectivity of the membrane via leak conductance pathways. 3. For electrical-to-mechanical transduction (axon diameter change with excitation), an investigation into two well-known electrostatic properties of dielectrics, electrostriction and piezoelectricity, in the context of the nerve membrane is undertaken which predicts a few percent change in axon dimensions for voltage- and space-clamped axons.
    Type of Medium: Electronic Resource
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