Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
72 (1998), S. 1320-1322
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Photoluminescence peak energy shifts under applied [110] and [100] uniaxial stress are interpreted within the framework of a multi-band Kohn–Luttinger model which takes into account the mixing of heavy, light, and spin-orbit split-off holes within the valence band. Experimental data are presented for 0.5%, 1%, and 1.7% Si1−yCy/Si samples which are best fitted with a conduction band offset of approximately 70%. At this value of the conduction band offset, we show that small amounts of space charge induced band bending are required to explain the experimentally observed results. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.120981
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