Publication Date:
2018-03-24
Description:
Author(s): Roland Nagy, Matthias Widmann, Matthias Niethammer, Durga B. R. Dasari, Ilja Gerhardt, Öney O. Soykal, Marina Radulaski, Takeshi Ohshima, Jelena Vučković, Nguyen Tien Son, Ivan G. Ivanov, Sophia E. Economou, Cristian Bonato, Sang-Yun Lee, and Jörg Wrachtrup Semiconductor defects allowing efficient interaction between spins and photons can serve as building blocks for scalable quantum networks. The silicon vacancy ( V Si ) in SiC possesses controllable, long-lived ground-state spins, for adjustable fluorescence properties. However, its broad distribution of emitted-photon energies at room temperature means V Si ’s feasibility needs to be checked at liquid-helium temperature, where phonon coupling is suppressed. This study finds a long spin-coherence time, a doubling in fluorescence intensity by spin control, and 40% photon emission into the zero-phonon line, indicating that V Si in SiC truly is promising for spin-based quantum technology. [Phys. Rev. Applied 9, 034022] Published Fri Mar 23, 2018
Electronic ISSN:
2331-7019
Topics:
Physics
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