ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Avalanches and self-organization in the dynamics of cellular magnetic domain patterns (invited) : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5436-5440 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cellular magnetic domain patterns in magnetic garnet films are an example of a spatially-extended metastable system whose evolution is limited by topological constraints. For sufficiently large applied magnetic fields, the entire pattern is under tension and can respond to local perturbations via large collective motions. In this regime disordered cellular patterns respond to small increases in applied field or to manual cell breakage via avalanches of sequential cell destruction which sweep through the pattern via the motion of cell walls. After one avalanche has stopped another can be started by a small increase in field or by another manual cell breakage; the system thus tends to self-organize into barely stable states. The measured distributions of avalanche size and duration are best fit by power laws. These features suggest that cellular avalanches may be an example of self-organized criticality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348002
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Conductance fluctuations and quantum chaotic scattering in semiconductor microstructures (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Chaos 3 (1993), S. 643-653 
    Details
    ISSN: 1089-7682
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We review recent experiments on aperiodic conductance fluctuations in ballistic GaAs/AlGaAs microstructures in the shape of a stadium billiard and a circle with point-contact leads, measured at millikelvin temperatures. Much of the observed behavior can be analyzed within a semiclassical approach to quantum chaotic scattering. After a brief review of the Landauer–Büttiker formulation of coherent transport, a variety of novel experimental phenomena and comparisons to semiclassical theory are presented. In particular, we discuss quantum-enhanced backscattering, the power spectrum of conductance fluctuations, crossover to the high-magnetic-field and tunneling regimes, and an application allowing the rate of phase-randomizing scattering to be measured in chaotic ballistic microstructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.165927
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Nonlinear transient response of extrinsic Ge far-infrared photoconductors (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5457-5469 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Physical mechanisms responsible for nonlinear phenomena and anomalous transient response of cooled extrinsic far-infrared photoconductors are discussed. A simple model describing carrier generation, trapping, and impact ionization is presented, which describes the transient response on fast time scales 10−3 to 10−4 sec, neglecting changes in space charge. Carrier heating by a dc electric field produces relatively fast, damped oscillatory response to external excitation. A small-signal analysis of these equations is a test of stability. An analysis of the role of ideal electrical contacts and space charge is also presented. The very slow (∼1 sec) overshoot and transient response commonly observed in cooled extrinsic photoconductors is explained by the dynamics of trapped space charge near the injecting electrical contact. A small-signal analysis determines the characteristic time constants for these processes, which are typically ∼1 sec. Calculated examples of the recombination and ionization coefficients, dc I-V curves, differential equation flow diagrams, and transient response are presented for parameters typical of p-type Ge photoconductors doped with shallow acceptor levels, and suggestions for the design of more stable photoconductors are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334822
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Quantum Hall effect in InAs/AlSb quantum wells (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1428-1430 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate via low-temperature electron transport measurements the realization of a high-mobility ((approximately-greater-than)300 000 cm2/V s) two-dimensional electron gas in unintentionally doped InAs/AlSb single 120 A(ring) quantum wells grown on GaAs substrates by molecular beam epitaxy. Magnetoresistance and Hall measurements at T∼0.4 K show a well-formed quantum Hall effect, with effects due to spin splitting observed at filling factors as high as ν=17. The electron densities of these wells could be reduced by a factor ∼5 by using the negative persistent photoconductivity of these samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105188
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Self-assembled chains of graphitized carbon nanoparticles (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2699-2701 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a technique which allows self-assembly of conducting nanoparticles into long continuous chains. Transport properties of such chains have been studied at low temperatures. At low bias voltages, the charges are pinned and the chain resistance is exponentially high. Above a certain threshold VT, the system enters a conducting state. The threshold voltage is much bigger than the Coulomb gap voltage for a single particle and decreases linearly with increasing temperature. A sharp threshold was observed up to about 77 K. Such chains may be used as switchable links in Coulomb charge memories. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123941
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Micro-electromagnets for atom manipulation (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2906-2908 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Micro-electromagnets for atom manipulation have been constructed, including magnetic mirrors (serpentine patterns) and traps (circular patterns). They consist of planar micron-scale Au wires on sapphire substrates fabricated using lithography and electroplating. At liquid nitrogen or helium temperatures in vacuum the wires support currents of several amperes with current density ∼108 A/cm2 and power dissipation ∼10 kW/cm2, and they produce magnetic fields to 0.3 T and gradients to 103 T/cm. The micro-electromagnet mirror was used to deflect a beam of metastable helium atoms at grazing angles ∼0.5 mrad. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121455
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Cryogenic scanning probe characterization of semiconductor nanostructures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 671-673 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the use of a scanned probe microscope (SPM) at 4 Kelvin to study electron transport through a ballistic point contact in the two-dimensional electron gas inside a GaAs/AlGaAs heterostructure. The electron gas density profile is locally perturbed by the charged SPM tip providing information about the electron flow through the point contact. As the tip is scanned, one obtains a spatial image of the ballistic electron flux as well as the topographic profile of the structure. Calculations indicate the spatial resolution is comparable to the electron gas depth. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117801
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Low-density high-mobility electron gas in wide parabolic GaAs/AlxGa1−xAs wells (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2823-2825 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Remotely doped wide parabolic GaAs/AlxGa1−xAs wells are used to create thick ((approximately-greater-than) 1000 A(ring)) layers of high-mobility ((approximately-greater-than) 2×105 cm2/V s) electron gas with three-dimensional densities below (by a factor ∼3) the metal-insulator transition for doped GaAs. The temperature dependences of the Hall mobility and sheet density show no qualitative changes in a series of three samples spanning the metal-insulator transition. Shubnikov–de Haas oscillation measurements are used to determine the width of the electron gas layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103753
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Josephson junction oscillators as probes of electronic nanostructures (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5808-5810 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated high-quality planar Nb/AlOx/Nb Josephson junctions on-chip adjacent to quantum dots in a near surface two-dimensional electron gas in a GaAs/AlGaAs heterostructure. When used as a voltage-tunable oscillator coupled capacitively to a quantum dot, the Josephson junction can produce a localized time-dependent potential of 200 μV across the dot at frequencies in excess of 300 GHz. The fabrication process involves five separate patterning and processing steps to define the multilayer integrated device. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368847
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Measuring interactions between tunnel-coupled quantum dots in the quantum Hall regime (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4043-4045 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present measurements of the relaxation of frustrated charge configurations via tunneling in a double quantum dot in the quantum Hall regime. We studied transport through two quantum dots in series at each of three Landau level filling factors: ν=2, 3, and 4. The double dot conductance was measured as a function of the induced charge on each dot and of the interdot tunnel conductance to demonstrate the evolution of the charging diagram with increasing interdot electron tunneling. At all three filling factors, we find that the evolution from well separated to joined dots is complete at an interdot tunnel conductance Gint≅e2/h, in contrast with the zero magnetic field case. We also observe that the residual interaction energy relative to the charging energy increases above the zero field value. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371326
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...