ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Homoepitaxial Si films doped both n- and p-type were deposited by molecular-jet chemical vapor deposition (CVD) from 10% Si2H6 in H2. Doping was accomplished from the background using PH3 for n-type and B2H6 for p-type. The dopant concentration was controlled over four orders of magnitude (1015–1019 cm−2) for films deposited between 650 and 800 °C, and n-type films had significantly higher growth rates and doping levels compared to films deposited by very-low pressure CVD at equal Si2H6 throughput in the same reactor. Even without optimization, solar cells constructed from these films had open-circuit voltages and short-circuit currents as high as 490 mV and 21 mA cm−2, respectively, with fill factors as high as 70%. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.120194
Permalink