Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
88 (2000), S. 5062-5070
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Experimental data for oxygen precipitation densities in Czochralski-grown silicon following multistep annealing treatments are compared with predictions from a coupled-flux model for time-dependent nucleation. This is a more correct model for diffusion-controlled nucleation processes than is the classical theory of nucleation since it directly couples the two stochastic fluxes of interfacial attachment and long-range diffusion. Quantitative agreement is obtained between the measured and calculated densities for nucleation temperatures greater than 650 °C. Good agreement is obtained for lower temperatures if the oxygen diffusion rate is taken to be larger than is predicted from high-temperature diffusion data. The fit values for the diffusion coefficient from the nucleation data are in good agreement with recent results from dislocation-unlocking experiments. The oxygen loss calculated by coupled-flux nucleation and diffusion-limited growth agrees with the experimental observations. Classical theory nucleation calculations predict a much greater oxygen loss, signaling the failure of the theory to correctly treat nucleation when long-range diffusion is important, true in most solid-state precipitation processes. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1311309
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