Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
67 (1995), S. 1447-1449
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We calculate the binding energies of donors bound to X valleys in type-II GaAs–AlAs quantum well structures using an anisotropic variational method which enables us to take into account the effective mass anisotropy and quantum confinement. For a comparative study, we use two sets of effective masses obtained from different measurements [B. Rheinänder et al. Phys. Status Solidi B 49, K167 (1972) and M. Goiran et al., Physica B 177, 465 (1992)]. We show that the binding energies have a pronounced dependence with the effective mass, AlAs layer thickness, and impurity position. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.114490
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