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  • 1
    Electronic Resource
    Electronic Resource
    Scanning tunneling microscopy and spectroscopy characterization of ion-beam-induced dielectric degradation in ultrathin SiO2 films and its thermal recovery process (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 44-48 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated dielectric degradation in ultrathin SiO2 films induced by ion-beam irradiation and its thermal recovery by using scanning tunneling microscopy (STM) and spectroscopy. Our STM results showed that although the ion-beam-induced damage uniformly spreads on the oxide, the dielectric properties are locally recovered by thermal annealing. We found that the tunneling spectra obtained from the ultrathin SiO2 films are sensitive to the process-induced damage, and observed both a leakage current through the damaged oxide film and the thermal recovery of the insulating features. In addition, we confirmed a local charging phenomena of the damaged oxide caused by electron traps around the STM tip. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371824
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of local dielectric breakdown in ultrathin SiO2 films using scanning tunneling microscopy and spectroscopy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6704-6710 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Local dielectric breakdown of ultrathin SiO2 films grown on silicon substrates has been investigated by using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). We found that STM observation can reveal individual quasibreakdown spots created by hot-electron injection into the oxide, as well as features of the topography such as atomic steps on the oxide surface. STS was used to study the local electrical properties of the oxide films before and after electrical stressing. We observed a leakage current at the quasibreakdown spots that passed through defect levels in the ultrathin oxide films. We also found that several tunneling spectra obtained from near leakage sites showed clear negative differential resistance. This phenomenon was attributed to the conductance change in the leakage path due to electron charging effects. Moreover, we confirmed the stressing polarity dependence of the leakage-site creation, and that atomic steps on the oxide and at the SiO2/Si interface did not cause any serous problem in the quasibreakdown process. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370182
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  • 3
    Electronic Resource
    Electronic Resource
    Preservation of atomic flatness at SiO2/Si(111) interfaces during thermal oxidation in a furnace (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1715-1717 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiO2/Si(111) interfaces formed by a furnace oxidation are studied by a scanning reflection electron microscopy (SREM). SREM observation indicates that the initial atomic steps on a Si(111) surface are preserved at the SiO2/Si interface and the interfacial steps do not move laterally even after 48-nm-thick oxidation. A profile analysis of reflection high-energy electron diffraction shows that the SiO2/Si interface consists of islands which have a diameter of about 5 nm and monolayer depth. Our results indicate that the layer-by-layer oxidation caused by two-dimensional island nucleation proceeds under furnace oxidation. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121161
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  • 4
    Electronic Resource
    Electronic Resource
    Observation and creation of current leakage sites in ultrathin silicon dioxide films using scanning tunneling microscopy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1987-1989 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We used scanning tunneling microscopy (STM) to investigate the local leakage current through ultrathin silicon dioxide (SiO2) films grown on Si substrates. Individual leakage sites, which were created by hot-electron injection from the STM tip under a high sample bias of +10 V, were identified from the local change in surface conductivity due to defect creation in the oxide films. When we reversed the stressing polarity (using a negative sample bias) no leakage sites were created in the oxide film. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121241
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  • 5
    Electronic Resource
    Electronic Resource
    Nanometer-scale Si selective epitaxial growth on Si(001) surfaces using the thermal decomposition of ultrathin oxide films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2807-2809 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanometer-scale Si crystals were produced by selective epitaxial growth on Si(001) surfaces passivated with 0.3-nm-thick oxide films. Window areas for the growth were provided by void formation during the thermal decomposition of the oxide films. Dynamical processes of the void formation and epitaxial growth were observed at 630–730 °C by scanning tunneling microscopy. The crystal shape was a quadrangular pyramid and the typical size was 20 nm in length and 0.8 nm in height. The thin oxide films were found to act as masks for the selective epitaxial growth of nanoscale structures. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119065
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  • 6
    Electronic Resource
    Electronic Resource
    Scanning tunneling microscopy study on void formation by thermal decomposition of thin oxide layers on stepped Si surfaces (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4091-4095 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate void formation by thermal decomposition of thin oxide layers on stepped Si(001) and Si(111) surfaces by using high-temperature scanning tunneling microscopy. We have found that the surface roughening during void formation on stepped Si surfaces is less than that on on-axis Si surfaces. The Si atoms necessary for oxide decomposition are supplied from step edges on the stepped surface rather than by hole nucleation. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367162
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  • 7
    Electronic Resource
    Electronic Resource
    Scanning tunneling microscopy study on the surface and interface of Si(111)/SiO2 structures (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3638-3642 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning tunneling microscopy was used to investigate the surface and interface of Si(111)/SiO2 structures. The oxide thickness ranged from 0.3 to 1.7 nm. The surface was observed using a sample bias larger than 4.0 V. Fourier transform spectra of the surface images showed clear seventh order spots originating from the Si(111)7×7 reconstruction, indicating that 2.7 nm periodicity of the reconstruction remains on the oxide surface. At a sample bias of less than 4.0 V, a Si(111)/SiO2 interface was observed when 0.3-nm-thick oxide was partially left on the Si surface. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366579
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  • 8
    Electronic Resource
    Electronic Resource
    Development of a multifunctional surface analysis system based on a nanometer scale scanning electron beam: Combination of ultrahigh vacuum-scanning electron microscopy, scanning reflection electron microscopy, Auger electron spectroscopy, and x-ray photoelectron spectroscopy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 4185-4190 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed a multifunctional surface analysis system based on a scanning electron beam for nanofabrication and characterization of surface reactions for fabrication processes. The system performs scanning electron microscopy (SEM), scanning reflection electron microscopy (SREM), Auger electron spectroscopy (AES), and x-ray photoelectron spectroscopy. Nanometer scale resolution is obtained for ultrahigh vacuum (UHV)-SEM while the mechanical pumping instruments are operated. Single atomic steps on Si(111) surfaces are observed through SREM. Surface sensitive AES measurement is achieved with SREM geometry; this has a great advantage for investigating atomic step related surface reactions. High spatial resolution AES analysis is also achieved by using a nanometer scale probe beam. Auger electron signals from a hundred Ag atoms on a Si(111) surface are successfully detected with high sensitivity. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147567
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  • 9
    Electronic Resource
    Electronic Resource
    Effects of electron-beam-assisted dry etching on optical and electrical properties (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1516-1518 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The degree of damage induced by electron-beam (EB)-assisted dry etching is optically and electrically characterized and compared with ion-beam-assisted etching (IBAE). The optical and electrical damage are evaluated using the photoluminescence (PL) from GaAs/AlGaAs quantum well (QW) structures and the Hall effect in two-dimensional electron gas (2DEG) heterostructures, respectively. These layered samples are etched by a newly proposed EB-assisted selective dry etching technique using Cl2 and SF6 gases. EB-assisted dry etching is proven to produce no degradation of either type of property, whereas a 54% reduction in PL intensity from a 30-nm-deep QW and 8% reduction in Hall mobility in a 51-nm-deep 2DEG are observed for IBAE.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110760
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  • 10
    Electronic Resource
    Electronic Resource
    Electron-beam-assisted dry etching for GaAs using electron cyclotron resonance plasma electron source (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 3011-3013 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron-beam (EB)-assisted dry etching of GaAs using Ar electron cyclotron resonance (ECR) plasma as an electron shower source is developed to achieve a low energy and high current density electron beam (EB). The rate of EB-assisted dry etching is more than ten times larger than for Cl2 gas etching.It is confirmed, through photoluminescence measurement, that this etching method causes less damage than ion beam techniques and is very effective for damaged layer removal. Using this technique, a 0.4 μm linewidth low-damage fine structure of GaAs was fabricated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107994
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