ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract A comparative study of the anodic polarization behaviour of HgTe, CdTe and Hg0.8Cd0.2Te at constant current density was undertaken. It is argued that metal dissolution starts first, which renders the semiconductor surface negatively charged and tellurium rich. The process continues until the overpotential across the interface rises sufficiently to dissociate the tellurium at which point tellurium dissolution and oxidation begins. The continuation of this process evidently requires that the metal dissolution follows. This dissolution-precipitation mechanism for oxide nucleation is supported here. It is predicted that the molar ratio of HgTeO3 to CdTeO3 in the anodic oxide on Hg0.8Cd0.2Te should be ∼1.1. This is in good agreement with the experiments. The overvoltages required to initiate oxidation are shown to decrease when the current density is increased.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00576537
Permalink