ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
ZnO:Al(ZAO) thin film is a kind of transparent conductive functional material which has apotential application in the solar cell and Atom Oxygen resisting systems of spacecrafts. Highperformance ZAO thin films were prepared by reactive magnetron sputtering and then irradiated byγ-ray with different dose or rate of irradiation. The as-deposited sample and irradiated ones werecharacterized by X-ray Diffraction, Scanning Electron Microscopy and Hall-effect measurement toinvestigate the dependences of the structure, morphology and electrical properties of ZAO on the doseand rate of γ-ray irradiation. Measurement of Positron Annihilation Doppler-BroadeningSpectroscopy was carried out to study the variation of the defects in ZAO thin films before and afterirradiation. It is indicated that γ-ray will excite the carriers, which are electrons in ZAO. A high rate ofγ-ray irradiation could slightly destroy the bonds of Zn-O and decrease the crystallinity, while theeffect of low rate irradiation is similar to heat annealing and increase the crystallinity of ZAO thinfilms. γ-ray has no apparent influences on the negative vacancy defects in ZAO thin film
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/16/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.546-549.2137.pdf
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