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  • 1
    Electronic Resource
    Electronic Resource
    Dissociative electron attachment to some chlorine-containing molecules (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 3145-3152 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The electron-attachment rate constants of CH3Cl, C2H5Cl, and C2H3Cl in N2 and Ar were measured as a function of reduced electric field (E/N). These data and the previous data of SOCl2 and CCl2F2 were converted to the electron-attachment cross sections as a function of electron energy. The present results are compared with existing fragmentary data. The dissociative electron-attachment processes of the studied molecules are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.455916
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  • 2
    Electronic Resource
    Electronic Resource
    Positive and negative persistent photoconductivities in semimetallic AlxGa1−xSb/InAs quantum wells (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3152-3158 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a detailed investigation of the "positive" persistent photoconductivity (PPC) and "negative" persistent photoconductivity (NPPC) in semimetallic AlxGa1−xSb/InAs quantum wells. The studies of the NPPC and PPC effects have been performed under various conditions, such as different photon energy of excitation, different temperature, different Al composition x, and different well width. It is found that all the previously proposed mechanisms fail to explain several of our observations. We suggest that the NPPC and PPC effects are produced principally by two competing processes. At a high temperature, the photoconduction is dominated by the photogenerated electrons in the InAs well, in which the relaxation of the excess electrons is prohibited by an energy barrier due to the trapping of photoexcited holes by deep defects in the InAs well. As a result, the PPC is observed. At low temperature, electrons in the InAs layer are photoexcited into the local potential minima induced by compositional fluctuations at the AlGaSb and InAs interface, the number of electrons in the InAs well decreases, thus the NPPC occurs. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371182
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  • 3
    Electronic Resource
    Electronic Resource
    Electron attachment rate constants of HBr, CH3Br, and C2H5Br in N2 and Ar (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4905-4910 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron attachment rate constants of bromine compounds in the buffer gases of N2 and Ar (∼250 Torr) were measured as a function of E/N (or mean electron energy). The measured electron attachment rate constants of HBr, CH3Br, and C2H5Br show maximum values of 1.05×10−9, 1.08×10−11, and 9.3×10−11 cm3/s at mean electron energies of 0.55, 0.4, and 0.8 eV, respectively. The electron drift velocities for the gas mixtures of CH3Br in N2 and Ar were also measured.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340431
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  • 4
    Electronic Resource
    Electronic Resource
    Two-photon-ionization coefficients of CS2, SO2, and (CH3)3N (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3295-3301 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrons produced by two-photon ionization of CS2, SO2, and (CH3)3N in N2 and CH4 buffer gases at 193 nm were investigated using a parallel-plate drift-tube apparatus. At a low charge density, the transient voltage induced by electron motion between the electrodes is proportional to the gas pressure and the square of laser power. The two-photon-ionization coefficients measured from the number of electrons produced are 3.3×10−27, 8.3×10−30, and 1.7×10−27 cm4/W for CS2, SO2, and (CH3)3N, respectively. The coefficient for (CH3)3N agrees with the earlier value measured by ion current. At a high charge density, the number of electrons observed deviates from the square dependence of laser power. The numbers of ions and electrons are greatly reduced by charge recombination whose reaction rate is enhanced in the presence of space charge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335789
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  • 5
    Electronic Resource
    Electronic Resource
    Shortening of electron conduction pulses by electron attacher C3F8 in Ar, N2, and CH4 (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 184-187 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The attachment rate constants of C3F8 in the buffer gases of Ar, N2, and CH4 are measured using a parallel-plate drift-tube apparatus. The dependences of the electron drift velocities on the contents of C3F8 in various buffer gases are investigated. Electrons are produced by irradiating the cathode with ArF laser photons. The transient voltage pulses induced by the electron motion are observed. We find that the C3F8-CH4 mixture has the desirable characteristics of both electron drift velocity and attachment rate constant for the application of diffuse-discharge opening switches.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335705
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  • 6
    Electronic Resource
    Electronic Resource
    Attachment of low-energy electrons to HCl (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1625-1631 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron-attachment rate constants of HCl diluted in Ar and N2 were measured as a function of the reduced electric field E/N. These data were converted to the electron-attachment cross section of HCl using the electron-energy distribution functions of pure Ar and N2. The dependence of the electron-attachment rate constant and the mean electron energy on the fraction of HCl in each buffer gas was investigated. A comparison of the current result with both available experimental data and theoretical calculations is made.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341810
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  • 7
    Electronic Resource
    Electronic Resource
    Temperature dependence of second harmonic generation from Si(100)(2×1) surfaces (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1558-1559 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Our experiments on reconstructed Si(100)(2×1) surfaces revealed that the reflected second harmonic (SH) signals at 532 nm originated from the contribution of the electrons in surface states. The SH intensity was inversely proportional to the square of the sample temperature. A preliminary explanation for this temperature dependence was proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112943
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  • 8
    Electronic Resource
    Electronic Resource
    Sb/GaSb heterostructures and multilayers (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1098-1100 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully synthesized heterojunctions and elementary multilayered structures of the semimetal-semiconductor system Sb/GaSb using molecular beam and migration enhanced epitaxies. The study is motivated in part by the potential for producing an indirect narrow-gap semiconductor, in which a confinement-induced positive energy gap in the Sb layers will lead to highly attractive properties for nonlinear optical switches operating in the infrared. One may also be able to exploit the long mean free path in Sb (up to 2 μm) in studying quantum transport phenomena. X-ray diffraction confirms the ordered growth of GaSb/Sb/GaSb multilayers, and field-dependent magnetotransport measurements yield electron and hole mobilities ≥3×104 cm2/V s in Sb thin films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109792
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  • 9
    Electronic Resource
    Electronic Resource
    Improved thermal stability of wet-oxidized AlAs (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 974-976 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lateral thermal wet oxidization of the AlAs layer in a GaAs/AlAs/GaAs sandwiched structure is studied by Raman spectroscopy and Nomarski microscopy. A significant improvement in thermal stability of the oxidized AlAs layer has been achieved by optimizing the oxidation conditions, which can be used to fabricate reliable devices. We show that the thermal stability is strongly related to the removal of volatile products, such as As and As2O3, as evidenced by the Raman spectroscopy measurement. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1448166
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  • 10
    Electronic Resource
    Electronic Resource
    Electron attachment to H2O in Ar, N2, and CH4 in electric field (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4360-4367 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The attachment of electrons to H2O in Ar, N2 or CH4 is investigated using a parallel-plate drift-tube apparatus. Electrons are produced either by irradiation of the cathode with ArF laser photons or by two-photon-ionization of a trace of trimethylamine in a buffer gas. The transient voltage pulses induced by the electron motion between the electrodes are observed. The electron attachment rate of H2O is determined from the ratio of transient voltage with and without H2O added to the buffer gas. The measured electron attachment rate constants of H2O in Ar increase with E/N from 2 to 15 Td. Electron attachment due to the formation of "temporary'' negative ions in the H2O–N2 and H2O–CH4 mixture were observed. The lifetime of the negative ion was determined to be about 200 ns, whose nature is discussed. The "apparent'' electron attachment rate constants for the formation of "temporary'' negative ions in the H2O–CH4 gas mixture are measured for E/N from 1 to 20 Td. The electron drift velocities for the gas mixtures of H2O in various buffer gases are measured.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334596
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