ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The densities and mobilities of heavy and light holes have been simultaneously determined at various temperatures (1.2–300 K) in two molecular beam epitaxy-grown p-type Hg1−xCdxTe (x=0.224) samples from variable magnetic-field Hall measurements. The separation of the contribution from the light hole and heavy hole was achieved by a hybrid approach consisting of mobility spectrum analysis followed by a multicarrier fitting procedure. An acceptor energy level at ∼13 meV above the valence band, as well as various mass ratios of light to heavy holes for different temperature were obtained. In addition, the minority carrier (electron) and the surface two-dimensional electron concentrations and mobilities have also been derived as a function of temperature. The explicit experimental values obtained in this work should be useful to physics and modeling of HgCdTe infrared detectors. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.368652
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