Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 448-450
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The conduction behavior of metal-induced laterally crystallized (MILC) polycrystalline silicon (poly-Si) was studied and compared to that of the conventional solid-phase crystallized and low-pressure chemical vapor deposited poly-Si. MILC poly-Si was found to exhibit superior electrical properties, with significantly lower grain-boundary (GB) trap density, as well as much higher carrier mobility and conductivity. Furthermore, a unique anisotropic conduction behavior was discovered in MILC poly-Si, with the resistivity and its activation energy showing remarkable difference for conduction transverse or parallel to the MILC direction. These phenomena have been related to the fluctuation of the potential barrier associated with the longitudinal GBs separating the relatively ordered elongated grains in MILC poly-Si. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.125783
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