Publication Date:
2011-07-12
Description:
This article introduces a novel and valid process for preparing a high concentration substitutional N-doped TiO 2 photocatalytic film, i.e. firstly the titanium substrate was plasma nitrided and then the N-doped TiO 2 was synthesized on the surface of nitrided titanium by using micro-arc oxidation. Compared with the traditional thermal annealing, the present process provides a possibility to increase the nitrogen doping concentration up to 3.21 at.% and x to 0.11 in TiO 2– x N x , which exhibits a significant red-shift in the band-gap transition, narrow band gap to 2.6 eV, higher photo-generated charge carrier density and improved photocatalytic property.
Print ISSN:
0002-7820
Electronic ISSN:
1551-2916
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
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