Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
56 (1990), S. 743-745
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Scanning tunneling microscopy on cleaved Si(111) surfaces reveals stress-induced microstructures with two types of terraces: triangular-shaped terraces and long and narrow terraces with parallel [112¯] oriented steps, which is contrary to the previous observation [1¯1¯2] steps. Dimer rows in Si(111) 2×1 structures are found on the triangular terraces. On the parallel-stepped terraces, rows run in the [112¯] direction and their separation was appreciably smaller than that of the dimer rows in the 2×1 structure. A new model for this structure is proposed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.102699
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