Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
85 (1999), S. 8492-8494
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The mechanism of crystalline Si island formation from an amorphous film was discussed in relation to the free energy of the Si/SiO2 system. Agglomeration of the Si crystallite occurred forming islands, thus preventing a further increase in free energy. Crystal growth proceeded in two steps. At first, the size distribution of Si islands was unimodal but finally became bimodal during the crystallization process. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.370632
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