Publication Date:
2015-11-20
Description:
This paper investigates the effect of PVDF-TrFE layer to the electrical properties of MIS device. The MIS (Al/PMMA:TiO 2 /PVDF-TrFE/Si) structures were fabricated on n-type Si substrate. The results indicate that the properties of MIS improved drastically with PVDF-TrFE layer. I-V and C-V characteristics shows that the MIS has a fast operating voltage approximately 1 V, low leakage current, large capacitance. No hysteresis was observed compared to MIS without PVDF-TrFE layer. The improvement in the electrical properties of MIS (Al/PMMA:TiO 2 /PVDF-TrFE /Si) is due to the increment in the real permittivity, ε’ value of the insulator.
Print ISSN:
1757-8981
Electronic ISSN:
1757-899X
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
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