ISSN:
0001-1541
Keywords:
Chemistry
;
Chemical Engineering
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Chemistry and Pharmacology
,
Process Engineering, Biotechnology, Nutrition Technology
Notes:
The low-temperature nitridation of gallium arsenide, silicon and transition metals was investigated using hydrazine. Gallium nitride films were grown on gallium arsenide (GaAs) by direct reaction of the semiconductor surface layers with hydrazine et 200-400°C. Auger electron spectroscopy and X-ray photoelectron spectroscopy (XPS) analyses show that the films are primarily gallium nitride with a small oxide impurity. Thin nitride films (∼15 Å) were grown on silicon by reaction with hydrazine at 300-500°C. Ellipsometry results suggest that the film growth goes through different phases following linear, parabolic and logarithmic functions with time. XPS analysis shows that the nitride films could be formed at much lower temperatures than possible with ammonia (300 vs. 600°C). The formation of numerous transition metal nitrides (Co, Cr, Fe, Mo, Si, Ta, Ti, V, and W) by reaction with hydrazine at 400°C is demonstrated, as well as the chemical vapor deposition of boron nitride films from diborane and hydrazine reactants. The temperature at the mixing point was critical in determining the final composition of the film. A 1-D transport model suggests that the reaction rate at 400°C was kinetically limited. The results also agree qualitatively with thermodynamic equilibrium calculations.
Additional Material:
9 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/aic.690411011
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