ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract Measurements of the charge carrier lifetime in epitaxial structures based on narrow-gap Hg1−x CdxTe (x=0.22), grown by molecular-beam epitaxy with pulsed excitation using radiation at different wavelengths, are reported. It is shown that in p-type epitaxial films the lifetime is determined by the Auger recombination mechanism at temperatures corresponding to the impurity conductivity, and for n-type epitaxial films recombination via local centers is characteristic.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187058
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