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  • 1
    Electronic Resource
    Electronic Resource
    Gallium vacancies and the yellow luminescence in GaN (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 503-505 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated native defects and native defect-impurity complexes as candidate sources for the yellow luminescence in GaN. Using state-of-the-art first-principles calculations, we find strong evidence that the Ga vacancy (VGa) is responsible. The dependence of the VGa formation energy on Fermi level explains why the yellow luminescence is observed only in n-type GaN. The VGa defect level is a deep acceptor state, consistent with recent pressure experiments. Finally we show that the formation of VGa is enhanced by the creation of complexes between VGa and donor impurities. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117767
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  • 2
    Electronic Resource
    Electronic Resource
    Acceptor doping in ZnSe versus ZnTe (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1375-1377 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is a long-standing puzzle that ZnSe is difficult to dope p type, while ZnTe—which is very similar to ZnSe—is very easily doped p type. We report ab initio calculations which show that the solubilities of Li and Na acceptors are much greater in ZnTe than the solubilities of the same acceptors in ZnSe. We trace the origin of this difference to the bonding properties of the acceptors with the neighboring chalcogens. Our results also explain the experimentally observed dependence on dopant concentration of the dislocation density in p-type ZnSe epilayers grown on GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109681
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  • 3
    Electronic Resource
    Electronic Resource
    Doping of AlxGa1−xN (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 459-461 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: N-type AlxGa1−xN exhibits a dramatic decrease in the free-carrier concentration for x≥0.40. Based on first-principles calculations, we propose that two effects are responsible for this behavior: (i) in the case of doping with oxygen (the most common unintentional donor), a DX transition occurs, which converts the shallow donor into a deep level; and (ii) compensation by the cation vacancy (VGa or VAl), a triple acceptor, increases with alloy composition x. For p-type doping, the calculations indicate that the doping efficiency decreases due to compensation by the nitrogen vacancy. In addition, an increase in the acceptor ionization energy is found with increasing x. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120803
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  • 4
    Electronic Resource
    Electronic Resource
    Comment on "Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing'' [Appl. Phys. Lett. 68, 2526 (1996)] (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2441-2441 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117664
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  • 5
    Electronic Resource
    Electronic Resource
    Small valence-band offsets at GaN/InGaN heterojunctions (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2577-2579 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The band discontinuities between GaN and InN, as well as InGaN alloys, are key parameters for the design of nitride-based light emitters. Values reported to date are subject to large uncertainties due to strain effects at this highly mismatched interface. We have investigated the band lineups using first-principles calculations with explicit inclusion of strains and atomic relaxations at the interface. We find that the "natural" valence-band offset between unstrained InN and GaN is 0.3 eV. Prescriptions are given, including the band shifts, due to strains at a pseudomorphic interface. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118924
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  • 6
    Electronic Resource
    Electronic Resource
    Role of hydrogen in doping of GaN (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1829-1831 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the interactions between hydrogen and dopant impurities in GaN, using state-of-the-art first-principles calculations. Our results for energetics and migration reveal a fundamental difference in the behavior of hydrogen between p-type and n-type material; in particular, we explain why hydrogen concentrations in n-type GaN are low, and why hydrogen has a beneficial effect on acceptor incorporation in p-type GaN. Our results identify the conditions under which hydrogen can be used to control doping in semiconductors in general. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116027
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  • 7
    Electronic Resource
    Electronic Resource
    Room-temperature continuous-wave operation of InGaN multiple-quantum-well laser diodes with an asymmetric waveguide structure (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 581-583 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature continuous-wave (cw) operation is demonstrated with InGaN multiple-quantum-well laser diodes containing an asymmetric waveguide structure. Pulsed threshold current densities as low as 5.2 kA/cm2 have been obtained for ridge-waveguide laser diodes grown on sapphire substrates by metal-organic chemical vapor deposition. For improved thermal management, the sapphire substrate was thinned and the devices were mounted p side up onto a copper heatsink. Under cw conditions at 20 °C, threshold current densities were 8.3 kA/cm2 with threshold voltages of 6.3 V. The emission wavelength was 401 nm with output powers greater than 3 mW per facet. Under cw conditions, laser oscillation was observed up to 25 °C. The room-temperature cw operation lifetimes, for a constant current, exceeded one hour. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124448
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  • 8
    Electronic Resource
    Electronic Resource
    Performance and degradation of continuous-wave InGaN multiple-quantum-well laser diodes on epitaxially laterally overgrown GaN substrates (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1931-1933 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The performance and degradation characteristics of continuous-wave (cw) InGaN multiple-quantum-well laser diodes are reported. A cw threshold current as low as 62 mA was obtained for ridge-waveguide laser diodes on epitaxially laterally overgrown GaN on sapphire substrates grown by metalorganic chemical vapor deposition. Transmission electron microscopy reveals a defect density 〈5×107 cm−2 in the active region. The emission wavelength was near 400 nm with output powers greater than 20 mW per facet. Under cw conditions, laser oscillation was observed up to 70 °C. The room-temperature cw operation lifetimes, measured at a constant output power of 2 mW, exceeded 15 h. From the temperature dependence of the laser diode lifetimes, an activation energy of 0.50 eV±0.05 eV was determined. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1312860
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  • 9
    Electronic Resource
    Electronic Resource
    Arsenic impurities in GaN (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1009-1011 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a comprehensive first-principles investigation of arsenic incorporation in GaN. Incorporation of As on the N site, which has previously been implicitly assumed, is favorable only under n-type conditions in a Ga-rich environment. Less Ga-rich conditions, and particularly p-type doping, strongly favor incorporation of As on the Ga site, where it behaves as a deep double donor. Arsenic thus acts as a compensating center, forming a real threat to acceptor doping of GaN and making p-type doping of GaAsN alloys impossible. The calculated donor levels for AsGa are consistent with luminescence lines around 2.6–2.7 eV in GaN intentionally doped with As. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125922
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  • 10
    Electronic Resource
    Electronic Resource
    Universal alignment of hydrogen levels in semiconductors, insulators and solutions (2003)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 423 (2003), S. 626-628 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Hydrogen strongly affects the electronic and structural properties of many materials. It can bind to defects or to other impurities, often eliminating their electrical activity: this effect of defect passivation is crucial to the performance of many photovoltaic and electronic devices. A fuller ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature01665
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