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  • 1
    Electronic Resource
    Electronic Resource
    Ti/GaAs Schottky barriers prepared by ion beam sputtering (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4966-4971 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky barrier diodes of Ti on n-GaAs wafers were made by means of an ion beam sputtering (IBS) system under various sputtering conditions. We have investigated Schottky diode parameters by I–V and C–V measurements, and deep level centers by deep level transient spectroscopy (DLTS). The electrical characteristics are typical of good quality Ti/GaAs Schottky diodes for all samples, although a slight deterioration of the electrical performances has been observed for samples prepared at higher beam voltage. DLTS investigation shows the presence of damage defects in concentration lower than 1 × 1014 cm−3 for all samples with the exception of those prepared at higher beam voltage. Such low concentration of defects introduced by the sputtering deposition shows that IBS can be a very useful technique to prepare Schottky barriers on GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350594
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  • 2
    Electronic Resource
    Electronic Resource
    Dual-ion-beam sputter deposition of TiN films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7360-7362 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A dual-ion-beam technique for the deposition of TiN thin films is described. The metal-atom flux is supplied by sputtering a titanium target with an inert ion beam, while the reactive flux is supplied directly to the growing film by a low-energy ion beam. Results are presented for titanium films deposited at room temperature under a range of N+2 ion bombardment to form TiN. Analysis gives the incorporation of nitrogen, the background gas contamination, and the optical and electrical properties of TiN films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347596
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical properties of gold–polymer composite films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1362-1367 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical conductivity measurements in the range 50–300 K have been carried out on gold–fluorocarbon–polymer composite films. Such measurements have been performed on samples with different percentages in volume of gold, before and after thermal annealing up to 450 K. The experimental temperature dependence of conductivity, in the range 50–300 K, follows the exponential law σ=σ0 exp[−(T0/T)γ], where T0 and γ are constants. Best fit analyses carried out on experimental conductivity data, before and after thermal annealing, give values of γ that can be related to the gold content of the film and to the size of grains embedded in the polymeric matrix. Such results suggest that grain redistribution can take place after thermal annealing and that the grains tend to coalesce. Dependence of conductivity on temperature during heating and cooling processes is also discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1383981
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  • 4
    Electronic Resource
    Electronic Resource
    Swelling of CFx and CFx(Au) films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2039-2042 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The article reports on the swelling phenomenon, observed in the presence of acetone vapors in undoped and Au doped Teflon-like films. The Au presence enhances the degree of the swelling of the Teflon. Moreover, the metal grains embedded in the insulating matrix are used to detect swelling with an electrical method. A conductance model of metal embedded dielectric materials is used to describe the conductance variations with the polymer volume change. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372132
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  • 5
    Electronic Resource
    Electronic Resource
    Infrared distributed Bragg reflectors based on amorphous SiC/SiO2 heterostructures (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2799-2800 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous SiC/SiO2 distributed Bragg reflectors (DBR) deposited by ion beam sputtering at room temperature is reported on in this letter. The DBR consists of only 2.5 pairs and exhibits high peak reflectivity (84%) around ∼1.7 μm with a full width at half maximum of about 1000 nm. The measured reflectivity spectrum is well reproduced by the equivalent layer theory by using the measured refractive indices of SiC and SiO2 and including absorption losses. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119063
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  • 6
    Electronic Resource
    Electronic Resource
    Ion-beam sputtering deposition of fluoropolymer thin films (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 10-11 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that it is possible to deposit thin films with various CFx composition (1.26≤x≤1.83) by ion-beam sputtering. These materials with "teflon-like'' composition have been deposited at room temperature by Ar ion-beam sputtering of a teflon target; the film chemical composition has been determined by electron spectroscopy for chemical analysis. The fluorine-to-carbon ratio of the films, as well as their crosslinking degree, is shown to depend on the energy of the ions impinging on the target.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109729
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  • 7
    Electronic Resource
    Electronic Resource
    Organic–inorganic dielectric multilayer systems as high reflectivity distributed Bragg reflectors (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 732-734 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Unprecedentedly high reflectivity distributed Bragg reflectors consisting of fluorocarbon polymer (CFx) and high refractive index inorganic oxide multilayers have been fabricated by means of assisted ion-beam sputtering at room temperature. Multilayer stacks consisting of a CFx/TiOx and CFx/HfOx pairs exhibit reflectivities larger than 98% in the infrared and ultraviolet spectral region, respectively. The superior wide tunability and the high efficiency, with respect to inorganic–inorganic multilayers is due to the exceptionally low refractive index of the fluorcarbon polymer (n(similar, equals)1.35) on a very large spectral region (300–2000 nm). © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119628
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  • 8
    Electronic Resource
    Electronic Resource
    Swelling in organic–inorganic multilayer systems (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 771-773 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the swelling of organic–inorganic structures based on fluorocarbon polymer (CF2) layers sandwiched by two layers of inorganic ionic (HfO2) and inorganic covalent (CdS) materials. The swelling of the CF2 layer produces cracks on the uppermost inorganic layer. The cracks form a network of hexagonal defects with random distribution. The extension of the pattern and the mean unit size have been measured for different solvents by using a purposely developed optical profilometer. We show that the swelling phenomenon strongly depends on the polar forces between the molecules of the solvent and those of the inorganic layers. The electric dipole moment of the solvents and the ionicity of the inorganic materials are thus the crucial parameters influencing the crack density and shape. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121996
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  • 9
    Electronic Resource
    Electronic Resource
    Oxygen gas-sensing characteristics for ZnO(Li) sputtered thin films
    Amsterdam : Elsevier
    Sensors and Actuators B: Chemical 7 (1992), S. 747-751 
    Details
    ISSN: 0925-4005
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0925-4005(92)80397-G
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  • 10
    Electronic Resource
    Electronic Resource
    Electrical properties of ZnO/CdTe heterojunctions
    Amsterdam : Elsevier
    Journal of Crystal Growth 72 (1985), S. 530-537 
    Details
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-0248(85)90201-5
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