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  • 1
    Electronic Resource
    Electronic Resource
    Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1617-1619 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Control of dimension and position of Ge dots on a nanoscale is accomplished by combining Stranski–Krastanov growth mode with selective epitaxial growth technique in windows surrounded by SiO2 films on Si substrates. The dimension and the number of these dots are controlled by the size of the windows, and a single dot is grown in a window with the size of less than 300 nm. Moreover, clear phonon-resolved photoluminescence (PL) is observed from the Ge dots, reflecting the improved uniformity in their dimensions. The PL energy is found to be strongly dependent on the dot's dimension. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121131
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  • 2
    Electronic Resource
    Electronic Resource
    Luminescence study on interdiffusion in strained Si1−xGex/Si single quantum wells grown by molecular beam epitaxy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1651-1653 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical investigation of interdiffusion at Si1−xGex/Si heterointerfaces has been performed for the first time in strained Si1−xGex/Si single quantum wells (SQWs). Photoluminescence (PL) peak energy blue shift of up to 22 meV due to interdiffusion-induced potential profile modulation was observed after annealing in vacuum. The diffusion coefficients obtained were found to closely follow an Arrhenius behavior with an activation energy of 2.47±0.4 eV. Dramatic increase in the integrated PL intensity was observed in the annealed samples, as a result of the elimination of effective nonradiative centers. Strain relaxation was hardly observed even after 900 °C annealing, indicating the unprecedented structural stability of SQWs in contrast to rather vulnerable thick alloy layers. Anomalous peak red shift, probably due to surface oxidation, was observed by annealing in N2 ambient.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110725
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  • 3
    Electronic Resource
    Electronic Resource
    Abrupt Si/Ge interface formation using atomic hydrogen in Si molecular beam epitaxy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2975-2977 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Compositional abruptness of strained Si/Ge heterointerfaces grown by solid source Si molecular beam epitaxy under supply of atomic hydrogen (AH) was investigated using secondary ion mass spectrometry and reflection high-energy electron diffraction. Systematic variation of growth temperature and AH exposure pressure revealed that Ge segregation length is a steadily decreasing function of AH coverage on the growth surface. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112481
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  • 4
    Electronic Resource
    Electronic Resource
    Optical anisotropy in wire-geometry SiGe layers grown by gas-source selective epitaxial growth technique (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1126-1128 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the successful fabrication of SiGe quantum wire structures on a V-groove patterned substrate by gas-source selective epitaxial growth technique, and their optical properties. Optical anisotropy, showing the realization of luminescent SiGe layers with wire geometry, was clearly observed in electroluminescence from the SiGe layers grown inside the groove.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110827
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  • 5
    Electronic Resource
    Electronic Resource
    Photoluminescence of Si/SiGe/Si quantum wells on separation by oxygen implantation substrate (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2373-2375 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of the photoluminescence properties of Si/SiGe/Si quantum wells grown on separation by oxygen implantation (SIMOX) substrate by gas source molecular beam epitaxy is presented. Intense photoluminescence and carrier confinement in the quantum well are demonstrated. It is found that buried SiO2 isolates the top silicon on insulator from the back Si of SIMOX, and alters the photoluminescence properties of SIMOX compared to those of bulk Si. The SOI layer is found to be free of any strain. A SiO2/Si/SiO2 optical cavity is proposed by depositing SiO2 on SIMOX. A substantial enhancement of the photoluminescence intensity of SiGe quantum well is found, which is attributed to the optical confinement of incident beam in the cavity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111618
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  • 6
    Electronic Resource
    Electronic Resource
    Realization of crescent-shaped SiGe quantum wire structures on a V-groove patterned Si substrate by gas-source Si molecular beam epitaxy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2789-2791 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiGe/Si quantum wire structures were successfully fabricated on a V-groove patterned Si substrate by using gas-source Si molecular beam epitaxy (GS-SiMBE). A cross sectional image of transmission electron microscope clarified a crescent-shaped SiGe layer at the bottom of the V-groove owing to anisotropy of the growth rate on the different crystal orientations in GS-SiMBE.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110335
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  • 7
    Electronic Resource
    Electronic Resource
    Abrupt compositional transition in luminescent Si1−xGex/Si quantum well structures fabricated by segregant assisted growth using Sb adlayer (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 388-390 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Luminescent Si0.8Ge0.2/Si single quantum well structures with abrupt interfaces were successfully grown by segregant assisted growth (SAG) using Sb adlayer. The emission energy shifted to the lower side compared to the sample grown without Sb adlayer due to the suppression of the surface segregation of Ge atoms. Improved abruptness of interfaces was confirmed by sputter depth profile measurement, where no segregation edge was seen in the sample grown by SAG technique. Light emitting p-i-n diode structure can be fabricated by utilizing the incorporation of Sb during SAG.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110052
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  • 8
    Electronic Resource
    Electronic Resource
    Characterization of SiGe quantum wire structures by cathodoluminescence imaging and spectroscopy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1709-1711 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiGe quantum wire (QWR) structures grown by gas source molecular beam epitaxy have been characterized by cathodoluminescence (CL) imaging and spectroscopy. At T≈5 K, the CL spectra obtained with a focused beam contain SiGe luminescence features associated with electron-hole plasma recombination. When the electron beam is defocused three separate SiGe no-phonon luminescence features and their transverse optic phonon replicas are observed. These features are related to recombination in the SiGe (100) quantum wells (QWs), SiGe (111) QWs, and the SiGe QWRs. The high generation rates associated with the focused electron beam quenches the luminescence and results in electron-hole plasma recombination in the adjacent SiGe (100) QWs, and saturation of the radiative processes. Defocusing the electron beam reduces the injection level and nonradiative processes, enabling the SiGe bound exciton features to be observed. Monochromatic CL imaging of the SiGe (100) QWs show that at low temperatures the CL image is broadened by exciton diffusion and becomes sharper at higher temperatures (T=50–70 K) reflecting nonexcitonic recombination. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115024
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  • 9
    Electronic Resource
    Electronic Resource
    Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3024-3026 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a photoluminescence (PL) study on the growth mode changeover during growth of Ge on Si(100) substrates. Intense PL signals originating from both the flat Ge layer and the three-dimensional (3D) Ge islands are observed from Si/Ge/Si quantum wells with various Ge coverage. The onset of the 3D island formation is determined to be 3.7 monolayers (ML). It is also found that the 3D islands grow with only 3.0 ML of the flat Ge layer retained. This implies that only the 3.0 ML Ge is thermodynamically stable on Si(100) and hence corresponds to the "equilibrium'' critical thickness. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114265
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  • 10
    Electronic Resource
    Electronic Resource
    Enhancement of radiative recombination in Si-based quantum wells with neighboring confinement structure (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 524-526 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intense photoluminescence (PL) was observed from a new class of Si-based quantum well structures (QWs), that is, neighboring confinement structure (NCS). NCS consists of a single pair of tensile-strained-Si layer and a compressive-strained Si1−yGey layer sandwiched by completely relaxed Si1−xGex ( layers. In spite of the indirect band structure in real and k spaces, radiative recombination was enhanced compared with not only type-II strained-Si/relaxed-Si1−xGex QWs but also type-I strained-Si1−yGey/relaxed-Si1−xGex QWs. PL without phonon participation was found to dominate the spectrum possibly due to the effective carrier confinement for both electrons and holes. Quantum confinement effect was clearly observed by varying the well width, showing that the expected band alignment is realized. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115176
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