ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
DC characteristics and reverse recovery performance of 4H-SiC Junction Barrier Schottky (JBS)diodes capable of blocking in excess of 10 kV with forward conduction of 20 A at a forward voltageof less than 4 V are described. Performance comparisons are made to a similarly rated 10 kV4H-SiC PiN diode. The JBS diodes show a significant improvement in reverse recovery storedcharge as compared to PiN diodes, showing half of the stored charge at 25°C and a quarter of thestored charge at 125°C when switched to 3 kV blocking. These large area JBS diodes were alsoemployed to demonstrate the tremendous advances that have recently been made in 4H-SiCsubstrate quality
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.931.pdf
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