Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
57 (1985), S. 2956-2959
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
An epitaxial silicon film was successfully grown on a Si {100} substrate at the susceptor temperature of 730 °C in the SiH2Cl2/H2 system. Irradiation with a mercury-xenon (Hg-Xe) lamp during deposition appeared to be essential for obtaining the epitaxial film. Surface cleaning in the experiment was done by preannealing the substrate in H2 at 730 °C with Hg-Xe lamp light irradiation. The film was characterized by etching, electron channeling pattern observation, Raman scattering spectroscopy, and spreading resistance measurement.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.335238
Permalink
|
Location |
Call Number |
Expected |
Availability |