Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
55 (1989), S. 1345-1347
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Scaling relations for relaxation in strained-layer structures, based on simple descriptions of the dominant relaxation mechanisms and the influence of a stress-dependent relaxation activation energy, are obtained for general III-V semiconductor alloys. As a result, strained-layer relaxation in a given material system can be predicted over a wide range of structural parameters and temperature history based on a single relaxation measurement. This scaling treatment should prove useful in optimization of practical strained-layer device structures.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101594
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