Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
84 (1998), S. 6650-6658
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In this work we propose a model for the time dependence of the surface recombination velocity of silicon interstitials at nonoxidizing (inert) Si/SiO2 interfaces. The model takes into account the experimentally observed diffusion of silicon interstitials through a thermal oxide. Comparison with previously published experimental results from various sources as well as from new experiments, which we present here, demonstrate that the proposed model can accurately simulate one-dimensional as well as two-dimensional experiments. Analysis of the experimental data permits the estimation of the segregation coefficient of silicon interstitials at the silicon–oxide interface. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.369040
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