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  • 1
    Electronic Resource
    Electronic Resource
    Temperature dependence of magnetoresistance in Fe-Cr-Fe sandwiches : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4798-4800 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resistivity measurements have been performed as a function of temperature (1–300 K) and magnetic field (0–10 T) on antiferromagnetically coupled Fe-Cr-Fe sandwiches. Two types of samples were studied: MBE-grown sandwiches deposited epitaxially on the ZnSe (100) surface, and evaporated polycrystalline sandwiches deposited on glass substrates. The magnetic saturation field Hs determined from the resistivity ρ(H,T) is linear with temperature throughout the full temperature range for all samples. In the polycrystalline sandwiches, where the observed in-plane magnetic anisotropy is small, the linearity of Hs(T) implies that the antiferromagnetic interlayer exchange coupling A12 is also linear with temperature. The magnetoresistance of the sandwiches is constant at low temperature, and decreases linearly with increasing temperature above about 70 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348233
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  • 2
    Electronic Resource
    Electronic Resource
    Temperature-dependent magnetoresistance of Fe-Ni multilayers : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5819-5821 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature-dependent longitudinal and transverse magnetoresistance measurements have been carried out on a series of five Fe-Ni multilayer thin films. The samples were prepared by sputtering onto glass substrates that were nominally at room temperature and proved to be highly textured with the (111) direction perpendicular to the substrate. The multilayer wavelength ranged from 21 to 155 A(ring) with each sublayer composed of an equal number of monolayers of Fe and Ni. For the larger-wavelength films the magnetoresistance data shows a preferred direction of in-plane magnetization associated with the film growth parameters. With the field perpendicular to the plane the data shows the characteristic break at the applied magnetic field required for saturation. This saturation field is not temperature dependent and does not vary much or in any systematic manner with wavelength. Above the saturation field the magnetoresistance varies linearly with applied field with a slope, dR/dH, that varies systematically with temperature but very little with wavelength. For the smaller-wavelength samples where both the Fe and Ni are in the fcc crystal structure there is evidence in both the magnetization and dR/dH for a more complicated magnetic structure than either the long-wavelength films or bulk materials. In particular there is evidence for atomic scale magnetic anisotropy that differs from the film average.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350121
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  • 3
    Electronic Resource
    Electronic Resource
    Low-temperature transport properties of the mixed-valence semiconductor Ru0.5Pd0.5Sb3 (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6304-6308 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the transport properties of Ru0.5Pd0.5Sb3 from 300 down to 4 K and compared them to those of the binary-skutterudite antimonides. In particular, the lattice thermal conductivity of this compound is substantially lower than that of CoSb3 and IrSb3. This is attributed to the mixed-valency of ruthenium in this compound. Using near-edge extended absorption fine structure analysis, it is observed that ruthenium in this compound is in the Ru4+- and Ru2+-valence states in approximately equal proportions. The potential for thermoelectric applications of this material is also discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363707
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  • 4
    Electronic Resource
    Electronic Resource
    The effect of rare-earth filling on the lattice thermal conductivity of skutterudites (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4002-4008 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline samples of Ir4LaGe3Sb9, Ir4NdGe3Sb9, and Ir4SmGe3Sb9 have been made by hot isostatic pressing of powders. The lattice thermal conductivity of these filled skutterudites is markedly smaller than that of IrSb3; thus, void filling shows promise as a method for improving the thermoelectric properties of these materials. We present the lattice thermal conductivity of these filled skutterudites in an effort to quantify the impact of void filling in this structure. It is believed that the atoms "rattle'' in the voids of the structure and therefore interact with a broad spectrum of lattice phonons, reducing their mean free paths substantially below that in the "unfilled'' skutterudites. An additional phonon scattering mechanism is caused by phonon-stimulated transitions between the low-lying energy levels of the 4f electron configurations in the case of Nd3+ and Sm3+. Magnetic susceptibility and Hall-effect measurements are also presented. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361828
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  • 5
    Electronic Resource
    Electronic Resource
    Pressure contact probe for resistivity measurements in the temperature range 77 K〈T〈200 K (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 956-958 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have designed and built a sample probe that is particularly well suited for measuring the resistivity and superconducting transition temperature Tc of bulk high-Tc materials of nonuniform shape, in the temperature range 77 K〈T〈200 K. The probe uses spring-loaded indium pressure contacts and allows electrical contact to be made without altering or contaminating the sample. The probe is relatively efficient because of its short turn-around time in mounting of samples and cylcing of temperature. The resistivity and Tc of a bulk Y1Ba2Cu3−xAgxO7 sample was measured and the results compared with those from a more elaborate sample probe and Dewar system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140354
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  • 6
    Electronic Resource
    Electronic Resource
    Response of piezoelectric bimorphs as a function of temperature (1987)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 58 (1987), S. 780-783 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The temperature dependence of the response of piezoelectric "bimorphs'' (large-closed-square) ((large-closed-square) Registered trademark of Vernitron Corp., Bedford, OH) has been studied. This response is markedly decreased as temperature is decreased. Since the bimorphs are voltage limited, the amount of motion available is thus reduced as the temperature is lowered. This effect is important in the design specifications for the use of bimorphs at low temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139632
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  • 7
    Electronic Resource
    Electronic Resource
    High figure of merit in Eu-filled CoSb3-based skutterudites (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 598-600 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report measurements of electrical resistivity, thermopower, thermal conductivity, and Hall coefficient of polycrystalline Eu-doped CoSb3-based skutterudites with compositions Eu0.20Co4Sb12, Eu0.43Co4Sb11.59Ge0.31, and Eu0.42Co4Sb11.37Ge0.50. The relatively high mobility of these compounds, as compared to that of La- and Ce-filled skutterudites, may play a role in the large thermoelectric figure of merit (ZT〉1 at 700 K) of Eu0.42Co4Sb11.37Ge0.50. We discuss the significant potential of these compounds for thermoelectric applications. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1433911
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  • 8
    Electronic Resource
    Electronic Resource
    Electronic transport in Cd–Yb and Y–Mg–Zn quasicrystals (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2345-2347 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electronic transport properties of the stable binary Cd5.7Yb quasicrystal and a quasicrystal in the Y–Mg–Zn family is presented. Electrical conductivity in these systems is an order of magnitude higher than other quasicrystals, resulting in larger thermal conductivity values due to enhanced electronic contributions (λE=L0σT). Room temperature Hall measurements provide a charge carrier density of 2.3×1021 and 3.1×1020 cm−3 in Cd5.7Yb and Y–Mg–Zn, respectively, indicating these materials have a higher carrier concentration and are better conductors than other quasicrystalline counterparts. Thermoelectric power in both Cd5.7Yb and Y–Mg–Zn have relatively small magnitudes (16 and 8 μV/K, respectively). Despite many similarities between these two systems, low temperature specific heat reveals a low Debye temperature in Cd5.7Yb(140 K) while the Debye temperature of Y–Mg–Zn and other quasicrystals is at least twice as large. Consequences of the electrical transport in these systems will be discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1406555
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  • 9
    Electronic Resource
    Electronic Resource
    Device for simultaneously measuring stress, strain, and resistance in "whiskerlike'' materials in the temperature range 1.5 K〈T〈360 K (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 1010-1014 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe a device for measuring Young's modulus Y and the piezoresistance of "whiskerlike'' samples. The device can be used in a standard vari-temp Dewar in the temperature range 1.5 K〈T〈360 K. One end of the sample is attached to a movable rod suspended by leaf springs and the other end is held fixed. Force is applied to the rod by a coaxial electromagnet acting on permanent magnets attached to the rod. Displacements are measured with a capacitive technique. We have used the device to measure Young's modulus for the charge density wave material TaS3. We also measured the Young's modulus of some Cu whiskers for comparison.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142050
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  • 10
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    Charge-Density-Wave Carrier Concentration in NbSe3as a Function of Magnetic Field and Temperature (1988)
    American Physical Society
    Details
    Publication Date: 1988-10-10
    Print ISSN: 0031-9007
    Electronic ISSN: 1079-7114
    Topics: Physics
    Published by American Physical Society
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