Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
85 (1999), S. 2929-2933
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Raman scattering measurements on low temperature GaAs layers are presented. Phonons in both GaAs and As are studied. The transition from diluted As in the GaAs matrix to the small As clusters formed after annealing is analyzed. This is performed by observing the reduction of the GaAs bound charge, i.e., the longitudinal optical GaAs frequency downshift, to the appearance of the crystalline As vibrational mode. From the phonon shifts of crystalline As, the diameter and the strain are derived, accordingly to transmission electron microscopy measurements. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.369058
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