Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
78 (2001), S. 2387-2389
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Thin-film detectors made of hydrogenated amorphous silicon (a-Si:H) and amorphous silicon carbide (a-SiC:H) with adjustable sensitivity in the ultraviolet (UV) spectrum were developed. Thin PIN diodes deposited on glass substrates in N–I–P layer sequence with a total thickness of down to 33 nm and a semitransparent Ag front contact were fabricated. The optimized diodes with a 10 nm Ag contact exhibit spectral response values above 80 mA/W in the wavelength range from 295 to 395 nm with a maximum of 91 mA/W at 320 nm. For longer wavelengths, the spectral response drops by 50% at 450 nm. Increasing the thickness of the Ag front contact leads to a narrowing of the spectral response at around 320 nm, which allows the adjustment from a broad UV to a selective UV–B-sensitive detector. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1365948
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