ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
Collection
Keywords
Publisher
Language
Years
  • 1
    Unknown
    Postglacial tectonic and sea level history of the central Canadian Arctic (1991)
    Ottawa : Minister of Suppley and Services Canada
    Associated volumes
    Details Availability
    Call number: 91.1141 SR
    In: Bulletin
    Pages: VI, 56 S. : Ill., graph. Darst.
    ISBN: 0660140519
    Series Statement: Bulletin / Geological Survey of Canada 397
    Language: English
    Branch Library: GFZ Library
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    BOOK
    Link to Library Catalog
    get availability status
  • 2
    Monograph available for loan
    Monograph available for loan
    Geomorphology and ecosystems : proceedings of the 36th Binghamton Geomorphology Symposium, University of Buffalo - Buffalo, New York, October 7-9, 2005 (2005)
    Amsterdam [u.a.] : Elsevier
    Details Availability
    Call number: M 10.0423
    Description / Table of Contents: Geomorphology plays a fundamental role in controlling many ecosystem processes, and in turn, ecosystems can have a profound influence on many geomorphic forms and processes. Over the past few decades, a proliferation of research has developed at the interface of geomorphology and ecosystems ecology. The 2005 Binghamton Symposium brought together some of the leading researchers from both communities to address these critical interfaces between the disciplines. This paper reviews some of the aspects of the disciplines of geomorphology and ecosystems ecology, and the papers presented at the symposium. The papers in this volume illustrate the current status of the disciplines, the difficulties in bridging the disciplines, and the issues that are emerging as research priorities.
    Type of Medium: Monograph available for loan
    Pages: VI, 240 S. : Ill., graph. Darst., Kt.
    Series Statement: Geomorphology : Special issue 89.2007,1/2
    URL: http://www.sciencedirect.com/science?_ob=PublicationURL&_tockey=%23TOC%235887%232007%23999109998%23662535%23FLA%23&_cdi=5887&_pubType=J&_auth=y&_acct=C000007398&_version=1&_urlVersion=0&_userid=111175&md5=3e3d5ce25a0acfd28a5895c13d56f477
    Classification:
    Geography and Geomorphology
    Location: Upper compact magazine
    Branch Library: GFZ Library
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    BOOK
    Link to Library Catalog
    get availability status
  • 3
    Electronic Resource
    Electronic Resource
    Hydroxylation of .alpha.,.beta.-unsaturated nitriles and esters in steroid systems (1979)
    s.l. : American Chemical Society
    The @journal of organic chemistry 44 (1979), S. 702-710 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo01319a009
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Raman scattering of coupled longitudinal optical phonon-plasmon modes in dry etched n+-GaAs (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3754-3759 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have carried out extensive Raman scattering investigations of the damage caused by the dry etching in GaAs. The heavily doped n+-GaAs (2–3×1018 cm−3) allows the study of the coupled longitudinal optical (LO) phonon-plasmon mode as a probe to assess the dry etch-induced damage. Three etching techniques were used including conventional radio frequency (rf) reactive ion etching (RIE), ion beam etching (IBE), and electron cyclotron resonance radio frequency reactive ion etching (ECR-RIE). It is demonstrated that the etched damage is confined to a few tens of nanometers after 20 nm of material is etched away. ECR-RIE etching produces the smallest damage. It is found that in RIE etching, as etching proceeds, the depletion depth saturates while for purely physical etching (IBE) the depletion depth increases continuously, at least under the conditions used.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350885
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    A molecular beam study of ethane on Si(111)7×7: Energy accommodation and trapping (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 2759-2766 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The interaction of a molecular beam of ethane with the Si(111)7×7 surface has been studied using electron energy loss spectroscopy (EELS), low energy electron reflectivity (LEER), and temperature programmed desorption (TPD). Dissociative adsorption of ethane is not observed on this surface at 〈90 K for incident energies up to 1.5 eV and nozzle temperature of 1000 K. Ethane adsorbs molecularly on Si(111)7×7 at 〈80 K in submonolayer coverages and forms multilayers at temperatures below 66 K. The monolayer is found to desorb with first order kinetics with an activation energy of 0.25 eV and pre-exponential factor of 1014±1 s−1. At normal incidence, the probability of trapping is found to decrease with increasing translational energy, falling by a factor of 10 as the incident energy is increased from 0.1 to 1.5 eV. The data are fit by a hard cube model with an effective surface mass of 100 amu, which is between three and four times the mass of a silicon atom. For impact energies (approximately-greater-than)0.8 eV, trapping is observed to be higher than would be expected from the hard cube model. Possible explanations for this deviation are discussed. The trapping probability is found to obey total energy scaling. Changes in the internal energy of the ethane due to variations in the nozzle temperature from 300 to 1000 K are observed to produce negligible effects on the trapping probability.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.463066
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Translationally and vibrationally activated reaction of CO2 on Si(111)7×7 (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 3285-3297 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The interaction of CO2 molecules with the Si(111)7×7 surface for translational energies between 0.2 and 1.6 eV and varying vibrational energies has been studied with time-resolved electron-energy-loss spectroscopy (TREELS), temperature-programed desorption, and Auger electron spectroscopy. Energy from the normal component of translational motion has been found to strongly increase the dissociation probability of CO2 on the surface. TREELS has been used to tentatively identify the resulting surface complex as O on a Si adatom with CO bonded in a bridging site to a next-layer Si rest atom. This complex decomposes at 400 K to a surface oxide and gas-phase CO. In addition, vibrational excitation has been found to increase the initial sticking coefficient for normal translational energies less than 0.5 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.461974
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    A differentially pumped electron-energy-loss spectrometer with multichannel detector for time-resolved studies at intermediate ambient pressures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 1652-1670 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The design, construction, and operation of a high-resolution electron-energy-loss spectrometer featuring a position-sensitive resistive anode detector and differential pumping are described. The position-sensitive detector provides a 66-fold increase in acquisition speed over a single-channel spectrometer. The differential pumping provides pressure isolation of 105 between the spectrometer elements, except the lenses, and the sample region. An optically isolated multicomputer-based control and data acquisition system provides complete spectrometer control and automated sample cleaning and characterization. The spectrometer, together with a differentially pumped supersonic molecular beamline, permits in situ measurements of the interaction of a wide range of gas molecules with solid surfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143320
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Optical and thermal properties of electron- and hole-trapping sites in the x-ray storage phosphor RbI:X (X=Tl+, In+, Pb2+, Eu2+) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1800-1808 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two-dimensional x-ray detectors based on x-ray storage phosphors are utilized in the field of medicine, biology, and physics. Defect centers and mechanisms contributing to the photostimulated luminescence (PSL) process of the x-ray storage phosphor RbI:X (X=Tl+, In+, Pb2+, Eu2+) are reported. By optical and thermoluminescence spectroscopy the electron and hole storage centers involved in the PSL process were identified. F- and Z type and Tl0 centers turned out to be the occupied electron storage centers, VK− and dopant-related VKA centers the hole-trapping sites. The specific choice of the dopant yields storage phosphors with different physical properties, such as emission characteristics, photostimulation characteristics, and thermal stability of the information storage. At T=300 K the information stored in the RbI:Tl+ phosphor is unstable, in RbI:Eu2+ it is nearly stable and in RbI:In+ stable. A physical model for the PSL as well as for the thermoluminescence is derived. In the Tl+-doped material Tl0 centers were found to act as efficient electron storage centers at temperatures below 180 K with a 4.7 times larger storage capability than F centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357698
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    A vibrational study of the adsorption and desorption of hydrogen on polycrystalline diamond (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1804-1810 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The adsorption and desorption of hydrogen from diamond films were studied in ultrahigh vacuum using high resolution electron energy loss spectroscopy as a probe of surface vibrations. Auger electron and energy loss spectroscopies were also used to characterize the diamond surface. The samples studied were boron-doped polycrystalline diamond films with chiefly (111) oriented facets. We attribute the observed spectral features to a monohydride species and local sp3 bonding on the diamond surface exposed to atomic hydrogen. A significant fraction of the hydrogen desorbs from the surface between 950 and 1000 °C, although some hydrogen persists even after heating to 1050 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356373
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Method for the determination of photostimulable defect center concentrations, production rates, and effective formation energies (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4658-4661 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method is proposed to determine radiation-induced defect center concentrations in solids which exhibit photostimulable luminescence. The technique relies on the determination of the number of photons released by spontaneous and photostimulated luminescence. A comparison with the x-ray-absorbed energy yields the effective formation energy of spontaneous luminescence photons and photostimulable centers. The method is applied representatively to BaFBr:Eu2+, which is utilized commercially as photostimulable x-ray storage phosphor in image plates for x-ray, γ-ray, electron, and neutron radiography. It is shown that in the utilized material on average 8 photostimulable F(Br−) centers (color centers based on bromine vacancies) and about 5 spontaneously emitted photons are generated by the absorption of 1 keV x-ray energy. Taking recent investigations into account which show that the x-ray generation of spontaneous luminescence and photostimulated luminescence centers is accompanied by the creation of approximately 36 nonphotostimulable defect centers, an average formation energy of about 20 eV per defect center can be calculated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355917
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...