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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 60 (1956), S. 41-44 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 60 (1956), S. 763-766 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 60 (1956), S. 767-770 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1892-1894 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Damage accumulation during high-dose oxygen implantation of Si to form a silicon-on-insulator material can deleteriously affect the quality of the material. In particular, dislocations formed in the superficial silicon layer are difficult to anneal, requiring temperatures near the melting point of Si to reduce their density to acceptable levels. A technique to suppress the formation of these dislocations during irradiation is presented. The success of this technique lies in its ability to interact with vacancy-type defects within the superficial layer whose accumulation precedes dislocation formation. A Si+ self-ion beam is used as a spatially specific tool to introduce Si atoms into the vicinity of these precursor defects prior to the onset of dislocation growth. The interaction of this beam with the precursor defects is shown to be effective in suppressing dislocation formation during subsequent O+ implantation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 896-898 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-dose O+ implantation of Si between 450 and 500 keV is investigated to better understand the mechanisms responsible for ion-induced growth of damage, especially in the top Si layer ahead of the region where a buried oxide forms. Two distinct states are identified in this Si layer over an extended range of fluence (≥1018 cm−2): a low-density defect state and a high-density one. These states are observed at all irradiation temperatures, including ambient temperature. The transition between the states is rather abrupt with the onset at a high fluence, which decreases with decreasing temperature. The existence of the low-density state offers a possibility of forming dislocation-free silicon-on-insulator wafers, even for ambient temperature irradiations. A processing method for achieving such wafers is discussed.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 679-681 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transient-enhanced diffusion (TED) during thermal annealing of ion-implanted B in Si is well established and attributed to the ion-induced, excess interstitials. On the other hand, the mechanism to account for TED of B in preamorphized (PA) Si remains unclear. Enhanced diffusion of the B persists in regrown layers even though the ion-induced interstitial defects responsible for TED in B+-only implanted Si are eliminated following regrowth. To test the hypothesis that TED in PA Si results from the "excess" interstitial-type defects below the amorphous-crystalline (a-c) interface, a buried PA layer has been recrystallized from the surface inward to the SiO2 interface of silicon-on-insulator material to eliminate all possible sources of excess interstitials. The effect on B diffusion and the role of the residual interstitial-type defects will be discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Water and environment journal 3 (1989), S. 0 
    ISSN: 1747-6593
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Notes: The UK approach to pollution control in tidal waters places considerable emphasis on balancing the contrasting needs of utilization of the waters for the assimilation of effluents with the protection of all identified uses, i.e. the Environmental Quality Objective/Environmental Quality Standard (EQO/EQS) approach. In order to protect uses of the waters for bathing and general amenity, this approach in the design of improvement schemes necessary for marine sewage discharges is examined. However, recent guidelines for consent applications dealing with schemes designed to protect bathing use suggest a departure from the EQO/EQS approach towards an emission standard when dealing with the solid phase of the sewage effluent. The implications of these approaches are discussed from the design (scientific and engineering) viewpoints.A summary of headworks processes and the current practice for preliminary treatment at marine outfall sites in the UK is reviewed, together with comments on their effectiveness. The terms of reference and work of a joint working group to examine the efficiency of screening equipment at marine outfall headworks is described, together with a technical summary of results collected at a range of sites and with various types of equipment. Recommendations for future research are given, and a strategy for screening is developed.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [s.l.] : Nature Publishing Group
    Nature 182 (1958), S. 367-369 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] THE following description of a laboratory specially designed for teaching nuclear physics and chemistry at the Royal Military College of Science, Shrivenham, may be helpful to educational institutions embarking on work in this field. This laboratory has been in full use for approximately two years ...
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 13 (1960), S. 56-57 
    ISSN: 0001-5520
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Journal of Applied Polymer Science 3 (1960), S. 129-131 
    ISSN: 0021-8995
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Measurements of the viscosities of a number of polymer-solvent systems have shown that an exponential expression, η = η0e[η]c, is applicable in the Concentration range up to c = 0.13 g./lOO cc. of solvent to within the precision of the experimental measurements. This exponential equat.ion lends itself readily to the determination of the intrinsic viscosity [η] from a single determination of η/η0 and is therefore of great use in determining molecular weights of high polymers from a Houwink-type expression. At higher concentrations, departures from the exponential equation occur, but agreement remains reasonably good up to a con- centration of 1 g./l00 cc. of solvent. The experimental results are compared with those predicted by the exponential expression and with those expected from a Huggins-type equation in which k′ = 0.5, which corresponds to the first two terms of the expanded form of the exponential.
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
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